Inventor
Hiroshi Koya
Inventor
Tokyo, JP
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth57%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1029%
Y10TTechnical subjects covered by former us classification14%
PatentTitleYear
6,682,597'Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer'20046,663,708'Silicon wafer, and manufacturing method and heat treatment method of the same'20036,461,447'Substrate for epitaxial growth'20026,428,619'Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2004Patents assigned to MITSUBISHI MATERIAL SILICON (3)· patent assignee history
2002Patents assigned to MITSUBISHI ELECTRIC CORP (1)· patent assignee history
2002–2004Based in Tokyo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI MATERIAL SILICON | 3 | 2002–2004 |
| MITSUBISHI ELECTRIC CORP | 1 | 2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 4 | 2002–2004 |