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Inventor

Wilfried von Ammon

Inventor
Hochburg, AT

Overview

46→
Patents
1988–2015
Patent span
Chemistry
Primary field (CPC C)

Patents· 46 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth39%
Y10TTechnical subjects covered by former us classification26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
H05BElectric heating2%
H10DInorganic electric semiconductor devices2%
A61GTransport, personal conveyances, or accommodation specially adapted for patients or disabled persons1%
H01LSemiconductor devices1%
PatentTitleYear
9,084,296'Induction heating coil and method for melting granules composed of semiconductor material'20159,005,563'Silicon wafer and method for producing it'20158,906,157'Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant'20148,834,627'Method for producing a single crystal composed of silicon by remelting granules'20148,580,033'Method for producing a single crystal of semiconductor material'20138,454,746'Method for producing a single crystal composed of silicon using molten granules'20138,241,421'Epitaxial wafer and production method thereof'20128,231,725'Semiconductor wafers of silicon and method for their production'20128,221,550'Process and apparatus for producing a single crystal of semiconductor material'20128,197,594'Silicon wafer for semiconductor and manufacturing method thereof'20128,172,941'Method and device for producing semiconductor wafers of silicon'20128,043,427'Semiconductor wafers of silicon and method for their production'20118,043,929'Semiconductor substrate and method for production thereof'20117,868,325'Semiconductor wafer of single crystalline silicon and process for its manufacture'20117,828,893'Silicon wafer and process for the heat treatment of a silicon wafer'20107,771,530'Process and apparatus for producing a silicon single crystal'20107,708,830'Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions'20107,655,089'Process and apparatus for producing a single crystal of semiconductor material'20107,537,657'Silicon wafer and process for producing it'20097,470,323'Process for producing p-doped and epitaxially coated semiconductor wafers from silicon'20087,417,297'Film or layer of semiconducting material, and process for producing the film or layer'20087,387,676'Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties'20087,335,256'Silicon single crystal, and process for producing it'20087,235,863'Silicon wafer and process for producing it'20077,052,948'Film or layer made of semi-conductive material and method for producing said film or layer'20067,025,827'Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor wafer'20066,887,775'Process and apparatus for epitaxially coating a semiconductor wafer and epitaxially coated semiconductor wafer'20056,843,848'Semiconductor wafer made from silicon and method for producing the semiconductor wafer'20056,803,331'Process for the heat treatment of a silicon wafer, and silicon wafer produced'20046,395,653'Semiconductor wafer with crystal lattice defects, and process for producing this wafer'20026,350,314'Process for producing nitrogen-doped semiconductor wafers'20026,238,477'Process and device for the production of a single crystal'20016,171,395'Process and heating device for melting semiconductor material'20016,153,008'Device and method for pulling a single crystal'20006,132,507'Process and device for the production of a single crystal'20006,059,874'Process and device for reducing the load on a seed crystal'20006,015,460'Method and apparatus for pulling a monocrystal'20006,001,170'Process and apparatus for the growth of single crystals'19995,951,753'Method and device for producing monocrystals'19995,868,831'Process for controlling the growth of a crystal'19995,759,261'Method for pulling a monocrystal'19985,746,825'Method for determining the diameter of a growing monocrystal'19985,567,399'Apparatus for producing a single crystal'19965,487,354'Method for pulling a silicon single crystal'19965,089,082'Process and apparatus for producing silicon ingots having high oxygen content by crucible-free zone pulling, silicon ingots obtainable thereby and silicon wafers produced therefrom'19924,749,837'Induction heating coil for the floating zone pulling of crystal rods'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988–2000Based in Burghausen, DE· patent location history
1996–2002Patents assigned to WACKER SILTRONIC HALBLEITERMAT (13)· patent assignee history
2000–2015Based in Hochburg, AT· patent location history
2004–2015Patents assigned to SILTRONIC AG (29)· patent assignee history
2008Based in Hocburg, AT· patent location history
2012–2015Patents assigned to VON AMMON WILFRIED (10)· patent assignee history
2012Patents assigned to WEBER MARTIN (4)· patent assignee history
2013–2015Patents assigned to ALTMANNSHOFER LUDWIG (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SILTRONIC AG292004–2015
WACKER SILTRONIC HALBLEITERMAT131996–2002
VON AMMON WILFRIEDself102012–2015
WEBER MARTIN42012
ALTMANNSHOFER LUDWIG32013–2015
Locations
LocationPatentsSpan
Hochburg, AT342000–2015
Burghausen, DE111988–2000
Hocburg, AT12008