Inventor
Praveen Muralheedaran Shenoy
Inventor
Wilkes-Barre, PA, US
Overview
Patents· 3 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices40%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation40%
G06FElectric digital data processing20%
PatentTitleYear
11,120,048Non-disruptive transition to synchronous replication state20218,357,976'Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device'20137,859,057'Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2013Patents assigned to FAIRCHILD SEMICONDUCTOR (2)· patent assignee history
2010–2013Based in Wilkes-Barre, PA, US· patent location history
2013Patents assigned to OH KWANGHOON (1)· patent assignee history
2013Patents assigned to REXER CHRISTOPHER L (1)· patent assignee history
2013Patents assigned to SHENOY PRAVEEN MURALHEEDARAN (1)· patent assignee history
2021Patents assigned to NETAPP INC (1)· patent assignee history
2021Based in Karnataka, IN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| FAIRCHILD SEMICONDUCTOR | 2 | 2010–2013 |
| NETAPP INC | 1 | 2021 |
| OH KWANGHOON | 1 | 2013 |
| REXER CHRISTOPHER L | 1 | 2013 |
| SHENOY PRAVEEN MURALHEEDARANself | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Wilkes-Barre, Pennsylvania, US | 2 | 2010–2013 |
| Karnataka, IN | 1 | 2021 |