Inventor
Motohisa Kado
Inventor
Susono, JP
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth54%
Y10TTechnical subjects covered by former us classification27%
H01LSemiconductor devices8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10DInorganic electric semiconductor devices4%
PatentTitleYear
10,968,535SiC single crystal production method and production apparatus202110,640,885SiC single crystal production method and production apparatus202010,450,671SiC single crystal and method for producing same201910,100,432Apparatus for producing SiC single crystal and method for producing SiC single crystal201810,081,883SiC single crystal production method and production apparatus20189,896,778'Apparatus for producing SiC single crystals and method of producing SiC single crystals using said production apparatus'20189,783,911'Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus'20179,732,441'Production apparatus and production method of SiC single crystal'20179,708,734'Method for producing a SiC single crystal in the presence of a magnetic field which is applied to a solution'20179,702,056'Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus'20179,624,599'SiC single crystal manufacturing method using alternating states of supersaturation'20179,617,655'Manufacturing apparatus of SiC single crystal and method for manufacturing SiC single crystal'20179,530,642'Method for producing SiC single crystal'20169,523,156'SiC single crystal ingot and production method therefor'20169,388,508'Manufacturing apparatus of SiC single crystal, jig for use in the manufacturing apparatus, and method for manufacturing SiC single crystal'2016Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2016–2021Patents assigned to TOYOTA MOTOR CO LTD (14)· patent assignee history
2016–2019Patents assigned to NIPPON STEEL & SUMITOMO METAL CORP (9)· patent assignee history
2016–2017Patents assigned to DAIKOKU HIRONORI (7)· patent assignee history
2016–2017Patents assigned to KADO MOTOHISA (7)· patent assignee history
2016–2017Patents assigned to KUSUNOKI KAZUHIKO (7)· patent assignee history
2016–2018Based in Susono, JP· patent location history
2016–2019Based in Gotenba, JP· patent location history
2017Based in Toyota, JP· patent location history
2018–2021Based in Gotemba-shi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOYOTA MOTOR CO LTD | 14 | 2016–2021 |
| NIPPON STEEL & SUMITOMO METAL CORP | 9 | 2016–2019 |
| DAIKOKU HIRONORI | 7 | 2016–2017 |
| KADO MOTOHISAself | 7 | 2016–2017 |
| KUSUNOKI KAZUHIKO | 7 | 2016–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Susono, JP | 7 | 2016–2018 |
| Gotenba, JP | 4 | 2016–2019 |
| Gotemba-shi, JP | 3 | 2018–2021 |
| Toyota, JP | 1 | 2017 |