Inventor

Shou-Shan Fan

Inventor

Beijing, CN

Overview

24→

Patents

2014–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 24 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary

H01LSemiconductor devices14%

H10DInorganic electric semiconductor devices11%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution10%

H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy8%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%

B82YSpecific uses or applications of nanostructures5%

H01GCapacitors5%

H10KOrganic electric solid-state devices5%

C01BNon-metallic elements4%

C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds4%

PatentTitleYear

11,125,626Cavity blackbody radiation source and method of making the same2021 11,127,540Energy storage device2021 11,127,953Carbon nanotube-transition metal oxide composite and method for making the same2021 11,121,341Organic light emitting diode including electron transport layer including carbon nanotubes2021 11,120,950Self-charging device for energy harvesting and storage2021 11,111,147Carbon nanotube composite structure and method for making the same2021 11,112,364Molecular detection device2021 11,114,635Method for making polymer solar cell2021 11,111,175Hydrophobic window, house and vehicle using the same2021 11,111,601Semimetal compound of Pt2021 11,099,367Freeform surface off-axial three-mirror imaging system2021 11,086,421Touch panel2021 11,079,284Plane source blackbody2021 11,078,597Method for making epitaxial structure2021 11,081,294Energy storage device2021 11,069,868Semiconductor structure, semiconductor device, photodetector and spectrometer2021 11,056,692Battery electrode, method for making the same and hybrid energy storage device using the same2021 10,615,255Fin formation for semiconductor device2020 10,586,733Multi-level air gap formation in dual-damascene structure2020 10,224,239Multi-level air gap formation in dual-damascene structure2019 10,204,827Multi-level air gap formation in dual-damascene structure2019 9,859,212'Multi-level air gap formation in dual-damascene structure'2018 9,368,590'Silicon-on-insulator transistor with self-aligned borderless source/drain contacts'2016 8,623,730'Method for fabricating silicon-on-insulator transistor with self-aligned borderless source/drain contacts'2014

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2014–2020Patents assigned to IBM (6)· patent assignee history

2014Patents assigned to FAN SUSAN S (1)· patent assignee history

2014–2020Based in Cohoes, NY, US· patent location history

2016Patents assigned to GLOBALFOUNDRIES INC (1)· patent assignee history

2021Patents assigned to HON HAI PREC IND CO LTD (17)· patent assignee history

2021Patents assigned to UNIV TSINGHUA (17)· patent assignee history

2021Based in Beijing, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HON HAI PREC IND CO LTD	17	2021
UNIV TSINGHUA	17	2021
IBM	6	2014–2020
FAN SUSAN Sself	1	2014
GLOBALFOUNDRIES INC	1	2016

Locations

Location	Patents	Span
Beijing, CN	17	2021
Cohoes, New York, US	7	2014–2020