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Inventor

Yuuichi Kamimuta

Inventor
Yokohama, JP

Overview

34→
Patents
2006–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 34 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices38%
H10BElectronic memory devices18%
H01LSemiconductor devices16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
G11CStatic stores7%
H10NElectric solid-state devices not otherwise provided for7%
C23CCoating metallic material2%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h101%
PatentTitleYear
10,923,500Memory device202110,923,486Memory device202110,861,528Semiconductor memory device202010,833,098Semiconductor memory device and method for manufacturing the same with increased storage capacity202010,636,468Semiconductor memory device202010,510,862Semiconductor memory device201910,446,749Memory device201910,249,818Memory element20199,997,569Memory device20189,761,798'Storage device'20179,721,951'Semiconductor device using Ge channel and manufacturing method thereof'20179,543,376'Semiconductor device and method for manufacturing the same'20178,772,751'Variable resistance semiconductor memory device'20148,207,584'Semiconductor device and manufacturing method of the same'20128,008,147'Semiconductor device and method for manufacturing the same'20117,964,489'Semiconductor device'20117,884,423'Semiconductor device and fabrication method thereof'20117,834,408'Semiconductor device and method for manufacturing the same'20107,807,990'Semiconductor device'20107,745,888'Method of making p-channel and n-channel MIS transistors using single film formation of TaC'20107,728,394'Semiconductor device and manufacturing method thereof'20107,713,884'Method of manufacturing semiconductor device that includes forming metal oxide film on semiconductor wafer'20107,646,072'Semiconductor device and method for manufacturing the same'20107,632,728'Method of forming TaC gate electrodes with crystal orientation ratio defining the work function'20097,612,413'Semiconductor device and manufacturing method thereof'20097,498,643'Semiconductor device and method for manufacturing the same'20097,435,655'Semiconductor device and method for manufacturing the same'20087,432,570'Semiconductor device and manufacturing method thereof'20087,348,644'Semiconductor device and method of manufacturing semiconductor device'20087,300,838'Semiconductor device and method of manufacturing semiconductor device'20077,205,618'Semiconductor device and method for manufacturing the same'20077,075,158'Semiconductor device and method of manufacturing the same'20067,053,455'Semiconductor device and method of manufacturing semiconductor device'20066,982,467'Semiconductor device and method of manufacturing the same'2006

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2006–2017Patents assigned to TOSHIBA KK (22)· patent assignee history
2006–2012Based in Yokohama, JP· patent location history
2006–2008Based in Kanagawa, JP· patent location history
2008–2011Based in Tsukuba, JP· patent location history
2011–2012Patents assigned to ROHM CO LTD (2)· patent assignee history
2011Patents assigned to HITACHI INT ELECTRIC INC (1)· patent assignee history
2012–2014Patents assigned to KAMIMUTA YUUICHI (2)· patent assignee history
2017–2021Patents assigned to TOSHIBA MEMORY CORP (10)· patent assignee history
2017–2021Based in Yokkaichi, JP· patent location history
2017Based in Mie, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK222006–2017
TOSHIBA MEMORY CORP102017–2021
KAMIMUTA YUUICHIself22012–2014
ROHM CO LTD22011–2012
HITACHI INT ELECTRIC INC12011
Locations
LocationPatentsSpan
Yokohama, JP112006–2012
Yokkaichi, JP102017–2021
Tsukuba, JP62008–2011
Kanagawa, JP42006–2008
Mie, JP22017