Inventor
Leo J. Schowalter
Inventor
Latham, NY, US
Overview
Patents· 66 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth20%
H01LSemiconductor devices19%
H10HInorganic light-emitting semiconductor devices having potential barriers18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
Y10TTechnical subjects covered by former us classification11%
H10DInorganic electric semiconductor devices4%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
C01BNon-metallic elements2%
B28DWorking stone or stone-like materials1%
C23CCoating metallic material1%
PatentTitleYear
11,124,892Defect reduction in seeded aluminum nitride crystal growth202111,015,263Defect reduction in seeded aluminum nitride crystal growth202110,971,665Photon extraction from nitride ultraviolet light-emitting devices202110,954,608UV-transparent aluminum nitride single crystal having a diameter of 35 mm to 150 mm and a predefined UV transparency metric at a wavelength of 265 nm202110,854,797Photon extraction from ultraviolet light-emitting devices202010,851,474Thermal control for formation and processing of aluminum nitride202010,801,127Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them202010,777,706Electrochemical removal of aluminum nitride substrates for electronic and optoelectronic devices202010,756,234Aluminum nitride substrate removal for ultraviolet light-emitting devices202010,700,237Ultraviolet light-emitting devices incorporating graded layers and compositional offsets202010,697,085Defect reduction in seeded aluminum nitride crystal growth202010,692,980Doped aluminum nitride crystals and methods of making them202010,612,156Two-stage seeded growth of large aluminum nitride single crystals202010,615,322Photon extraction from nitride ultraviolet light-emitting devices202010,550,493Thermal control for formation and processing of aluminum nitride202010,446,391Thick pseudomorphic nitride epitaxial layers201910,407,798Two-stage seeded growth of large aluminum nitride single crystals201910,392,722Defect reduction in seeded aluminum nitride crystal growth201910,347,805Photon extraction from ultraviolet light-emitting devices201910,316,428Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them201910,211,368Ultraviolet light-emitting devices incorporating graded layers and compositional offsets201910,211,369Ultraviolet light-emitting devices incorporating two-dimensional hole gases201910,125,432Defect reduction in seeded aluminum nitride crystal growth201810,106,913System for growth of large aluminum nitride single crystals with thermal-gradient control201810,074,784Photon extraction from nitride ultraviolet light-emitting devices201810,068,973Doped aluminum nitride crystals and methods of making them20189,970,127Method and apparatus for producing large, single-crystals of aluminum nitride20189,935,247Photon extraction from ultraviolet light-emitting devices20189,806,227'Ultraviolet light-emitting devices incorporating graded layers and compositional offsets'20179,771,666'Defect reduction in seeded aluminum nitride crystal growth'20179,680,057'Ultraviolet light-emitting devices incorporating two-dimensional hole gases'20179,670,591'Defect reduction in seeded aluminum nitride crystal growth'20179,624,601'Defect reduction in seeded aluminum nitride crystal growth'20179,620,676'Pseudomorphic electronic and optoelectronic devices having planar contacts'20179,598,791'Large aluminum nitride crystals with reduced defects and methods of making them'20179,580,833'Growth of large aluminum nitride single crystals with thermal-gradient control'20179,525,032'Doped aluminum nitride crystals and methods of making them'20169,447,521'Method and apparatus for producing large, single-crystals of aluminum nitride'20169,447,519'Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them'20169,437,430'Thick pseudomorphic nitride epitaxial layers'20169,299,880'Pseudomorphic electronic and optoelectronic devices having planar contacts'20169,034,103'Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them'20159,028,612'Growth of large aluminum nitride single crystals with thermal-gradient control'20158,962,359'Photon extraction from nitride ultraviolet light-emitting devices'20158,896,020'Method and apparatus for producing large, single-crystals of aluminum nitride'20148,834,630'Defect reduction in seeded aluminum nitride crystal growth'20148,747,552'Doped aluminum nitride crystals and methods of making them'20148,580,035'Large aluminum nitride crystals with reduced defects and methods of making them'20138,545,629'Method and apparatus for producing large, single-crystals of aluminum nitride'20138,349,077'Large aluminum nitride crystals with reduced defects and methods of making them'20138,323,406'Defect reduction in seeded aluminum nitride crystal growth'20128,222,650'Nitride semiconductor heterostructures and related methods'20128,123,859'Method and apparatus for producing large, single-crystals of aluminum nitride'20128,080,833'Thick pseudomorphic nitride epitaxial layers'20118,012,257'Methods for controllable doping of aluminum nitride bulk crystals'20117,776,153'Method and apparatus for producing large, single-crystals of aluminum nitride'20107,641,735'Doped aluminum nitride crystals and methods of making them'20107,638,346'Nitride semiconductor heterostructures and related methods'20097,323,414'Method for polishing a substrate surface'20087,211,146'Powder metallurgy crucible for aluminum nitride crystal growth'20077,087,112'Nitride ceramics to mount aluminum nitride seed for sublimation growth'20067,037,838'Method for polishing a substrate surface'20066,770,135'Method and apparatus for producing large, single-crystals of aluminum nitride'20046,719,843'Powder metallurgy tungsten crucible for aluminum nitride crystal growth'20045,365,054'Optical detector having a plurality of matrix layers with cobalt disilicide particles embedded therein'19945,273,617'Method of forming silicon structures with selectable optical characteristics'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–2021Based in Latham, NY, US· patent location history
2004–2021Patents assigned to CRYSTAL IS INC (63)· patent assignee history
2011–2021Patents assigned to SCHOWALTER LEO J (43)· patent assignee history
2011–2021Patents assigned to GRANDUSKY JAMES R (20)· patent assignee history
2012–2021Patents assigned to BONDOKOV ROBERT T (18)· patent assignee history
2012–2021Patents assigned to SLACK GLEN A (15)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CRYSTAL IS INC | 63 | 2004–2021 |
| SCHOWALTER LEO Jself | 43 | 2011–2021 |
| GRANDUSKY JAMES R | 20 | 2011–2021 |
| BONDOKOV ROBERT T | 18 | 2012–2021 |
| SLACK GLEN A | 15 | 2012–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Latham, New York, US | 66 | 1993–2021 |