LexDanaLexDanabeta
Inventor

Kiran V. Chatty

Inventor
Williston, VT, US

Overview

66→
Patents
2004–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 66 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices44%
H01LSemiconductor devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
G06FElectric digital data processing4%
H02HEmergency protective circuit arrangements3%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications2%
H03KPulse technique2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
B07CPostal sorting1%
PatentTitleYear
10,910,501Stucture and method for SIC based protection device202110,804,175Semiconductor devices comprising getter layers and methods of making and using the same202010,692,999High voltage MOSFET devices and methods of making the devices202010,622,472Metal oxide semiconductor (MOS) controlled devices and methods of making the same202010,361,302High voltage MOSFET devices and methods of making the devices201910,361,296Metal oxide semiconductor (MOS) controlled devices and methods of making the same201910,290,732High voltage semiconductor devices and methods of making the devices201910,163,892Silicon controlled rectifiers (SCR), methods of manufacture and design structures201810,062,749High voltage semiconductor devices and methods of making the devices20189,991,376High voltage MOSFET devices and methods of making the devices20189,876,104High voltage semiconductor devices and methods of making the devices20189,853,147High voltage MOSFET devices and methods of making the devices20179,620,428'Semiconductor devices comprising getter layers and methods of making and using the same'20179,583,482'High voltage semiconductor devices and methods of making the devices'20179,425,153'Semiconductor devices comprising getter layers and methods of making and using the same'20169,263,517'Extremely thin semiconductor-on-insulator (ETSOI) layer'20169,214,572'High voltage MOSFET devices and methods of making the devices'20159,035,395'Semiconductor devices comprising getter layers and methods of making and using the same'20158,994,118'Semiconductor devices comprising getter layers and methods of making and using the same'20158,956,925'Silicon controlled rectifier structure with improved junction breakdown and leakage control'20158,906,751'Silicon controlled rectifiers (SCR), methods of manufacture and design structures'20148,884,270'Vertical junction field effect transistors with improved thermal characteristics and methods of making'20148,803,276'Electrostatic discharge (ESD) device and method of fabricating'20148,796,731'Low leakage, low capacitance electrostatic discharge (ESD) silicon controlled recitifer (SCR), methods of manufacture and design structure'20148,760,827'Robust ESD protection circuit, method and design structure for tolerant and failsafe designs'20148,730,624'Electrostatic discharge power clamp with a JFET based RC trigger circuit'20148,692,290'Silicon controlled rectifier structure with improved junction breakdown and leakage control'20148,634,172'Silicon controlled rectifier based electrostatic discharge protection circuit with integrated JFETs, method of operation and design structure'20148,614,489'Vertical NPNP structure in a triple well CMOS process'20138,597,993'Electrostatic discharge (ESD) device and method of fabricating'20138,513,738'ESD field-effect transistor and integrated diffusion resistor'20138,373,956'Low leakage electrostatic discharge protection circuit'20138,363,367'Electrical overstress protection circuit'20138,354,722'SCR/MOS clamp for ESD protection of integrated circuits'20138,349,697'Field effect transistor with air gap dielectric'20138,350,329'Low trigger voltage electrostatic discharge NFET in triple well CMOS technology'20138,299,533'Vertical NPNP structure in a triple well CMOS process'20128,232,177'Method of generating uniformly aligned well and isolation regions in a substrate and resulting structure'20128,216,909'Field effect transistor with air gap dielectric'20128,169,760'Signal and power supply integrated ESD protection device'20128,110,483'Forming an extremely thin semiconductor-on-insulator (ETSOI) layer'20128,084,822'Enhanced stress-retention fin-FET devices and methods of fabricating enhanced stress retention fin-FET devices'20117,977,201'Methods for forming back-end-of-line resistive semiconductor structures'20117,939,395'High-voltage SOI MOS device structure and method of fabrication'20117,939,911'Back-end-of-line resistive semiconductor structures'20117,915,571'On demand circuit function execution employing optical sensing'20117,825,475'Mixed voltage tolerant input/output electrostatic discharge devices'20107,804,124'Device structures for a memory cell of a non-volatile random access memory and design structures for a non-volatile random access memory'20107,790,524'Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures'20107,790,543'Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures'20107,790,564'Methods for fabricating active devices on a semiconductor-on-insulator substrate utilizing multiple depth shallow trench isolations'20107,763,531'Method and structure to process thick and thin fins and variable fin to fin spacing'20107,737,498'Enhanced stress-retention silicon-on-insulator devices and methods of fabricating enhanced stress retention silicon-on-insulator devices'20107,709,926'Device structures for active devices fabricated using a semiconductor-on-insulator substrate and design structures for a radiofrequency integrated circuit'20107,709,896'ESD protection device and method'20107,700,428'Methods of fabricating a device structure for use as a memory cell in a non-volatile random access memory'20107,659,497'On demand circuit function execution employing optical sensing'20107,457,086'High voltage ESD power clamp'20087,301,210'Method and structure to process thick and thin fins and variable fin to fin spacing'20077,253,066'MOSFET with decoupled halo before extension'20077,203,045'High voltage ESD power clamp'20077,167,053'Integrated circuit amplifier device and method using FET tunneling gate current'20077,138,313'Method for creating a self-aligned SOI diode by removing a polysilicon gate during processing'20067,098,513'Low trigger voltage, low leakage ESD NFET'20067,005,686'Mixed voltage tolerant electrostatic discharge protection silicon controlled rectifier with enhanced turn-on time'20066,730,552'MOSFET with decoupled halo before extension'2004

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2004–2018Patents assigned to IBM (46)· patent assignee history
2004–2014Based in Williston, VT, US· patent location history
2011–2014Patents assigned to CHATTY KIRAN V (20)· patent assignee history
2011–2014Patents assigned to GAUTHIER JR ROBERT J (19)· patent assignee history
2011–2012Based in Essex Junction, VT, US· patent location history
2012–2014Patents assigned to MUHAMMAD MUJAHID (12)· patent assignee history
2012Based in Starkville, MS, US· patent location history
2013–2018Based in Oviedo, FL, US· patent location history
2015–2021Patents assigned to MONOLITH SEMICONDUCTOR INC (17)· patent assignee history
2015–2021Based in Round Rock, TX, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IBM462004–2018
CHATTY KIRAN Vself202011–2014
GAUTHIER JR ROBERT J192011–2014
MONOLITH SEMICONDUCTOR INC172015–2021
MUHAMMAD MUJAHID122012–2014
Locations
LocationPatentsSpan
Williston, VT, US382004–2014
Round Rock, Texas, US142015–2021
Oviedo, Florida, US102013–2018
Essex Junction, VT, US32011–2012
Starkville, MS, US12012