Inventor
Mayumi Morizuka
Inventor
Kawasaki, JP
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices36%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H01LSemiconductor devices17%
H03BGeneration of oscillations, directly or by frequency-changing, by circuits employing active elements which operate in a non-switching manner8%
H03HImpedance networks, e.g. resonant circuits6%
Y10TTechnical subjects covered by former us classification6%
H01QAntennas, i.e. radio aerials3%
H03FAmplifiers3%
H03LAutomatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses3%
PatentTitleYear
9,865,724'Nitride semiconductor device'20189,484,429'High electron mobility transistor (HEMT) capable of absorbing a stored hole more efficiently and method for manufacturing the same'20169,331,169'Nitride semiconductor Schottky diode and method for manufacturing same'20169,136,346'High electron mobility transistor (HEMT) capable of absorbing a stored hole more efficiently'20159,059,327'Nitride semiconductor Schottky diode and method for manufacturing same'20158,969,917'Semiconductor device and method for manufacturing same'20158,754,420'Semiconductor device'20147,490,390'Method of manufacturing a voltage controlled oscillator'20097,221,920'Voltage controlled oscillator, frequency synthesizer and communication apparatus'20077,211,933'Voltage controlled oscillator'20076,908,799'High electron mobility transistor and method of manufacturing the same'20056,689,652'Method of manufacturing a high electron mobility transistor'20046,555,851'High electron mobility transistor'20036,489,628'High electron mobility transistor and power amplifier'20026,134,424'High-frequency power amplifier and mobile communication device using same'20006,037,619'Field effect transistor and high-frequency power amplifier having same'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2018Patents assigned to TOSHIBA KK (16)· patent assignee history
2000–2018Based in Kawasaki, JP· patent location history
2014Patents assigned to IKEDA KENTARO (1)· patent assignee history
2014Patents assigned to MORIZUKA MAYUMI (1)· patent assignee history
2014–2016Based in Kanagawa, JP· patent location history
2015Patents assigned to KABUSHIKA KAISHA TOSHIBA (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 16 | 2000–2018 |
| IKEDA KENTARO | 1 | 2014 |
| KABUSHIKA KAISHA TOSHIBA | 1 | 2015 |
| MORIZUKA MAYUMIself | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kawasaki, JP | 10 | 2000–2018 |
| Kanagawa, JP | 6 | 2014–2016 |