Inventor
Thai Cheng Chua
Inventor
Cupertino, CA, US
Overview
Patents· 40 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H01JElectric discharge tubes or discharge lamps13%
H10DInorganic electric semiconductor devices11%
C23CCoating metallic material8%
H01LSemiconductor devices5%
B22FWorking metallic powder3%
B23KSoldering or unsoldering3%
B28BShaping clay or other ceramic compositions3%
B29CShaping or joining of plastics3%
B29KIndexing scheme associated with subclasses b29b, b29c or b29d, relating to moulding materials or to materials for moulds, reinforcements, fillers or preformed parts, e.g. inserts3%
PatentTitleYear
11,049,694Modular microwave source with embedded ground surface202111,037,764Modular microwave source with local Lorentz force202110,943,768Modular high-frequency source with integrated gas distribution202110,937,678Substrate support with multiple embedded electrodes202110,763,150System for coupling a voltage to spatially segmented portions of the wafer with variable voltage202010,748,745Modular microwave plasma source202010,720,311Phased array modular high-frequency source202010,714,372System for coupling a voltage to portions of a substrate202010,707,058Symmetric and irregular shaped plasmas using modular microwave sources202010,510,575Substrate support with multiple embedded electrodes201910,507,549Apparatuses, systems and methods for three-dimensional printing201910,504,699Phased array modular high-frequency source201910,493,564Apparatuses, systems and methods for three-dimensional printing20199,821,411'Apparatuses, systems and methods for three-dimensional printing'20179,399,256'Apparatuses, systems and methods for three-dimensional printing'20169,081,245'Electrochromic device with improved transparent conductor and method for forming the same'20158,975,166'Method and apparatus for atomic hydrogen surface treatment during GaN epitaxy'20158,900,897'Material with tunable index of refraction'20148,665,511'Electrochromic device with improved transparent conductor and method for forming the same'20148,524,581'GaN epitaxy with migration enhancement and surface energy modification'20138,377,803'Methods and systems for forming thin films'20138,318,590'Methods and systems for forming thin films'20128,143,147'Methods and systems for forming thin films'20127,964,514'Multiple nitrogen plasma treatments for thin SiON dielectrics'20117,888,217'Method for fabricating a gate dielectric of a field effect transistor'20117,837,838'Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus'20107,727,828'Method for fabricating a gate dielectric of a field effect transistor'20107,678,710'Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system'20107,645,709'Methods for low temperature oxidation of a semiconductor device'20107,645,710'Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system'20107,605,008'Plasma ignition and complete faraday shielding of capacitive coupling for an inductively-coupled plasma'20097,601,648'Method for fabricating an integrated gate dielectric layer for field effect transistors'20097,569,502'Method of forming a silicon oxynitride layer'20097,514,373'Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy'20097,509,844'Atomic force microscope technique for minimal tip damage'20097,214,628'Plasma gate oxidation process using pulsed RF source power'20077,179,754'Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy'20077,141,514'Selective plasma re-oxidation process using pulsed RF source power'20066,998,153'Suppression of NiSi2 formation in a nickel salicide process using a pre-silicide nitrogen plasma'20066,660,659'Plasma method and apparatus for processing a substrate'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2021Patents assigned to APPLIED MATERIALS INC (28)· patent assignee history
2003–2020Based in San Jose, CA, US· patent location history
2006–2021Based in Cupertino, CA, US· patent location history
2012–2015Patents assigned to INTERMOLECULAR INC (8)· patent assignee history
2012–2015Patents assigned to CHUA THAI CHENG (6)· patent assignee history
2012–2015Patents assigned to KRAUS PHILIP A (5)· patent assignee history
2012–2013Patents assigned to NIJHAWAN SANDEEP (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 28 | 2003–2021 |
| INTERMOLECULAR INC | 8 | 2012–2015 |
| CHUA THAI CHENGself | 6 | 2012–2015 |
| KRAUS PHILIP A | 5 | 2012–2015 |
| NIJHAWAN SANDEEP | 4 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Cupertino, California, US | 33 | 2006–2021 |
| San Jose, California, US | 7 | 2003–2020 |