Inventor

Didier Pribat

Inventor

Sevres, FR

Overview

31→

Patents

1983–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 31 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

Y10Sprimary

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests13%

B82YSpecific uses or applications of nanostructures12%

H01JElectric discharge tubes or discharge lamps10%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%

C30BSingle-crystal growth7%

G01NInvestigating or analysing materials by determining their chemical or physical properties6%

H10DInorganic electric semiconductor devices6%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%

B82BNanostructures formed by manipulation of individual atoms, molecules, or limited collections of atoms or molecules as discrete units4%

C01BNon-metallic elements4%

PatentTitleYear

10,938,026Silicon nanowire structure embedded in nickel silicide nanowires for lithium-based battery anodes2021 10,319,995Silicon nanowire structure embedded in nickel silicide nanowires for lithium-based battery anodes2019 9,206,509'Method for the controlled growth of a graphene film'2015 8,138,046'Process for fabricating a nanowire-based vertical transistor structure'2012 8,115,198'Array of differentiated FETS having a nanotube or nanowire channel and corresponding electronic device, for the detection of analytes'2012 8,008,109'Flat display active plate'2011 7,846,819'Method of synthesizing nanoscale filamentary structures, and electronic components comprising such structures'2010 7,491,269'Method for catalytic growth of nanotubes or nanofibers comprising a NiSi alloy diffusion barrier'2009 7,214,553'Process for the localized growth of nanotubes and process for fabricating a self-aligned cathode using the nanotube growth process'2007 6,476,408'Field emission device'2002 6,356,028'Screen control with cathodes having low electronic affinity'2002 5,625,250'Electronic micro-component self-sealed under vacuum, notably diode or triode, and corresponding fabrication method'1997 5,581,146'Micropoint cathode electron source with a focusing electrode'1996 5,429,737'Electrochemical sensor with integrated structure for the measurement of relative concentrations of reactive species'1995 5,397,735'Process for hardening active electronic components against ionizing radiations, and hardened components of large dimensions'1995 5,360,754'Method for the making heteroepitaxial thin layers and electronic devices'1994 5,314,569'Method for the controlled growth of crystal whiskers and application thereof to the making of tip microcathodes'1994 5,294,564'Method for the directed modulation of the composition or doping of semiconductors, notably for the making of planar type monolithic electronic components, use of the method and corresponding products'1994 5,273,929'Method of manufacture transistor having gradient doping during lateral epitaxy'1993 5,262,348'Method for the growing of heteroepitaxial layers within a confinement space'1993 5,127,990'Method of fabricating an electronic micro-component self-sealed under vacuum, notably diode or triode'1992 5,090,932'Method for the fabrication of field emission type sources, and application thereof to the making of arrays of emitters'1992 5,087,275'Electrochemical sensor having microcavities'1992 5,053,833'Device made of oxide superconductive material covered with ion conductive means for adjusting the doping level and T.sub.c thereof'1991 5,017,340'Temperature compensated resistive type sensor for the measurement of relative concentrations of fluid reactive species'1991 4,999,314'Method for making an alternation of layers of monocrystalline semiconducting material and layers of insulating material'1991 4,986,787'Method of making an integrated component of the cold cathode type'1991 4,956,073'Method to make microcavities and its application to an electrochemical sensor'1990 4,952,526'Method for the fabrication of an alternation of layers of monocrystalline semiconducting material and layers of insulating material'1990 4,540,452'Process for manufacturing a semi-conductor device of the type comprising at least one silicon layer deposited on an insulating substrate'1985 4,413,170'Thermal printing head'1983

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1983–2002Patents assigned to THOMSON CSF (21)· patent assignee history

1983–1997Based in Paris, FR· patent location history

1993–2015Based in Sevres, FR· patent location history

2010–2015Patents assigned to ECOLE POLYTECH (4)· patent assignee history

2010–2015Patents assigned to CENTRE NAT RECH SCIENT (3)· patent assignee history

2012–2015Patents assigned to PRIBAT DIDIER (3)· patent assignee history

2019–2021Patents assigned to HYUNDAI MOTOR CO LTD (2)· patent assignee history

2019–2021Based in Seoul, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
THOMSON CSF	21	1983–2002
ECOLE POLYTECH	4	2010–2015
CENTRE NAT RECH SCIENT	3	2010–2015
PRIBAT DIDIERself	3	2012–2015
HYUNDAI MOTOR CO LTD	2	2019–2021

Locations

Location	Patents	Span
Sevres, FR	15	1993–2015
Paris, FR	14	1983–1997
Seoul, KR	2	2019–2021