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Inventor

Shinji Fujieda

Inventor
Tokyo, JP

Overview

5→
Patents
2000–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 5 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices40%
H10BElectronic memory devices20%
C01BNon-metallic elements10%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy10%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution10%
Y02TClimate change mitigation technologies related to transportation10%
PatentTitleYear
9,748,556'Negative electrode material for secondary battery, and secondary battery'20178,148,757'Semiconductor device, and its manufacturing method'20127,679,148'Semiconductor device, production method and production device thereof'20107,064,382'Nonvolatile memory and nonvolatile memory manufacturing method'20066,048,795'Process of fabricating a semiconductor device having nitrogen-containing silicon layer and refractory metal layer'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2017Patents assigned to NEC CORP (4)· patent assignee history
2000–2017Based in Tokyo, JP· patent location history
2012–2017Patents assigned to FUJIEDA SHINJI (2)· patent assignee history
2012–2017Patents assigned to TODA AKIO (2)· patent assignee history
2012Patents assigned to RENESAS ELECTRONICS CORP (1)· patent assignee history
2017Patents assigned to FUKATSU KIMIYOSHI (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NEC CORP42000–2017
FUJIEDA SHINJIself22012–2017
TODA AKIO22012–2017
FUKATSU KIMIYOSHI12017
RENESAS ELECTRONICS CORP12012
Locations
LocationPatentsSpan
Tokyo, JP52000–2017