Inventor
Nigel G. Cave
Inventor
Saratoga Springs, NY, US
Overview
Patents· 32 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices26%
H01LSemiconductor devices21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1021%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
B82YSpecific uses or applications of nanostructures3%
H10BElectronic memory devices3%
G06FElectric digital data processing2%
Y02PClimate change mitigation technologies in the production or processing of goods2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation1%
H10HInorganic light-emitting semiconductor devices having potential barriers1%
PatentTitleYear
11,101,348Nanosheet field effect transistor with spacers between sheets202111,024,536Contact interlayer dielectric replacement with improved SAC cap retention202110,734,525Gate-all-around transistor with spacer support and methods of forming same202010,504,790Methods of forming conductive spacers for gate contacts and the resulting device201910,468,300Contacting source and drain of a transistor device201910,411,010Tall single-fin FIN-type field effect transistor structures and methods201910,381,459Transistors with H-shaped or U-shaped channels and method for forming the same201910,290,549Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same201910,249,728Air-gap gate sidewall spacer and method201910,249,535Forming TS cut for zero or negative TS extension and resulting device201910,236,218Methods, apparatus and system for forming wrap-around contact with dual silicide201910,211,100Methods of forming an air gap adjacent a gate of a transistor and a gate contact above the active region of the transistor201910,204,994Methods of forming a semiconductor device with a gate contact positioned above the active region201910,026,824Air-gap gate sidewall spacer and method20189,978,608Fin patterning for a fin-type field-effect transistor20189,947,589Methods of forming a gate contact for a transistor above an active region and the resulting device20189,929,157'Tall single-fin fin-type field effect transistor structures and methods'20188,741,743'Integrated assist features for epitaxial growth'20147,565,639'Integrated assist features for epitaxial growth bulk tiles with compensation'20097,470,624'Integrated assist features for epitaxial growth bulk/SOI hybrid tiles with compensation'20087,262,105'Semiconductor device with silicided source/drains'20077,144,784'Method of forming a semiconductor device and structure thereof'20067,109,051'Method of integrating optical devices and electronic devices on an integrated circuit'20067,067,342'Method of integrating optical devices and electronic devices on an integrated circuit'20066,924,184'Semiconductor device and method for forming a semiconductor device using post gate stack planarization'20056,566,264'Method for forming an opening in a semiconductor device substrate'20036,475,841'Transistor with shaped gate electrode and method therefor'20026,372,665'Method for forming a semiconductor device'20026,313,024'Method for forming a semiconductor device'20016,232,235'Method of forming a semiconductor device'20016,127,258'Method for forming a semiconductor device'20006,037,668'Integrated circuit having a support structure'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2003Patents assigned to MOTOROLA INC (7)· patent assignee history
2000–2014Based in Austin, TX, US· patent location history
2005–2014Patents assigned to FREESCALE SEMICONDUCTOR INC (8)· patent assignee history
2014Patents assigned to CAVE NIGEL (1)· patent assignee history
2018–2020Patents assigned to GLOBALFOUNDRIES INC (15)· patent assignee history
2018–2021Based in Saratoga Springs, NY, US· patent location history
2021Patents assigned to GLOBALFOUNDRIES US INC (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GLOBALFOUNDRIES INC | 15 | 2018–2020 |
| FREESCALE SEMICONDUCTOR INC | 8 | 2005–2014 |
| MOTOROLA INC | 7 | 2000–2003 |
| CAVE NIGELself | 1 | 2014 |
| GLOBALFOUNDRIES US INC | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Saratoga Springs, New York, US | 17 | 2018–2021 |
| Austin, Texas, US | 15 | 2000–2014 |