Inventor
Takahide Ikeda
Inventor
Tokorozawa, JP
Overview
Patents· 40 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices54%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests19%
H10BElectronic memory devices11%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h104%
A63FCard, board, or roulette games1%
G11CStatic stores1%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation1%
PatentTitleYear
11,033,812Input apparatus, method, and game processing method20217,238,582'Semiconductor device and process of producing the same'20076,864,559'Semiconductor memory device'20056,835,632'Semiconductor device and process of producing the same'20046,740,958'Semiconductor memory device'20046,727,152'Semiconductor device'20046,610,569'Semiconductor device and process of producing the same'20036,524,924'Semiconductor device and process of producing the same'20036,392,277'Semiconductor device'20026,208,010'Semiconductor memory device'20016,133,094'Semiconductor device and process of producing the same'20006,063,686'Method of manufacturing an improved SOI (silicon-on-insulator) semiconductor integrated circuit device'20005,793,097'Semiconductor device having conducting structure'19985,726,488'Semiconductor device having semiconductor elements formed in a retrograde well structure'19985,672,897'Bimos semiconductor integrated circuit device including high speed vertical bipolar transistors'19975,661,329'Semiconductor integrated circuit device including an improved separating groove arrangement'19975,643,805'Process for producing a bipolar device'19975,619,069'Bipolar device and production thereof'19975,512,497'Method of manufacturing a semiconductor integrated circuit device'19965,508,549'Semiconductor integrated circuit device and a method for manufacturing the same'19965,497,023'Semiconductor memory device having separately biased wells for isolation'19965,386,135'Semiconductor CMOS memory device with separately biased wells'19955,354,699'Method of manufacturing semiconductor integrated circuit device'19945,324,982'Semiconductor memory device having bipolar transistor and structure to avoid soft error'19945,321,650'BiCMOS semiconductor memory device using load transistors formed on an insulating film'1994RE034158'Complementary semiconductor device'19935,148,255'Semiconductor memory device'19925,057,894'Semiconductor integrated circuit device'19915,049,967'Semiconductor integrated circuit device and a method for manufacturing the same'19915,026,654'Method of manufacturing a semiconductor device utilizing a single polycrystalline layer for all electrodes'19914,984,200'Semiconductor circuit device having a plurality of SRAM type memory cell arrangement'19914,980,744'Semiconductor integrated circuit device and a method for manufacturing the same'19904,963,973'Semiconductor device'19904,921,811'Semiconductor integrated circuit device and a method for manufacturing the same'19904,862,240'Complementary semiconductor device'19894,799,098'MOS/bipolar device with stepped buried layer under active regions'19894,578,693'Semiconductive photodetector device'19864,377,421'Method of making a stacked emitter in a bipolar transistor by selective laser irradiation'19834,089,020'High power semiconductor diode'19784,005,450'Insulated gate field effect transistor having drain region containing low impurity concentration layer'1977Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1977–2004Patents assigned to HITACHI LTD (33)· patent assignee history
1977–1978Based in Kodaira, JP· patent location history
1983–2007Based in Tokorozawa, JP· patent location history
1994–1997Based in Tokorosawa, JP· patent location history
1998Patents assigned to HITACHI DEVICE ENGINEERING COM (1)· patent assignee history
2000–2007Patents assigned to HITACHI DEVICE ENG (5)· patent assignee history
2000Based in Saitama-shi, JP· patent location history
2004–2005Patents assigned to RENESAS TECH CORP (3)· patent assignee history
2021Patents assigned to NINTENDO CO LTD (1)· patent assignee history
2021Based in Kyoto, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI LTD | 33 | 1977–2004 |
| HITACHI DEVICE ENG | 5 | 2000–2007 |
| RENESAS TECH CORP | 3 | 2004–2005 |
| HITACHI DEVICE ENGINEERING COM | 1 | 1998 |
| NINTENDO CO LTD | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokorozawa, JP | 34 | 1983–2007 |
| Tokorosawa, JP | 2 | 1994–1997 |
| Kodaira, JP | 2 | 1977–1978 |
| Kyoto, JP | 1 | 2021 |
| Saitama-shi, JP | 1 | 2000 |