Inventor
Daisuke Kato
Inventor
Tokyo, JP
Overview
Patents· 80 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices19%
G11CStatic stores15%
H10KOrganic electric solid-state devices13%
H10DInorganic electric semiconductor devices5%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
H05KPrinted circuits3%
H10BElectronic memory devices3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
Y10TTechnical subjects covered by former us classification3%
PatentTitleYear
10,964,802Semiconductor device and method for manufacturing the same202110,916,646Semiconductor device and method for manufacturing the same202110,910,490Semiconductor device202110,847,754Semiconductor device having a density of the first inorganic layer in the first region is higher than in the second region202010,753,004Electrolytic chlorine dioxide gas manufacturing device2020D0885448Welding and cutting machine for metals202010,629,849OLED with a flattening layer between two barrier layers202010,556,910Synthesis of halichondrin analogs and uses thereof202010,516,138Display device having a density of the first inorganic layer in the first region is higher than in the second region201910,477,749Electronic component mounting machine201910,468,390Light emitting device and method of manufacturing the same201910,436,783Method for microbial antigen collection201910,381,530Light emitting device201910,319,947OLED with a flattening layer between two barrier layers201910,309,654Structure for cooling gas turbine engine201910,290,686Display device and method of manufacturing the same201910,239,032Unit for chlorine dioxide generation and chlorine dioxide generation device201910,243,168Display device having density of the first inorganic layer at a surface contacted the upper electrode is higher than density in a middle of the first inorganic layer201910,217,962Organic EL display device201910,199,552Light emitting device and electronic component201910,155,288Laser machining apparatus201810,134,959Light emitting device excellent in color rendering property for emitting light closer to sunlight201810,128,465Display device including sealing structure which suppresses water penetration into display region201810,115,872Light emitting device and method of manufacturing the same201810,094,029Chlorine dioxide production device and chlorine dioxide production method20189,967,979Light-emitting device20189,966,570Display device having a density of second inorganic layer in thickness direction changes in the thickness direction20189,947,851LED package20189,939,060Shift device20189,929,378'Organic el display device'20189,899,630'Organic EL display device'20189,882,168'Organic electroluminescence display device'20189,812,669'OLED with a flattening layer between two barrier layers'20179,801,320'Device for judging whether splicing of carrier tapes is allowed'20179,786,871'Method of manufacturing a display device'20179,735,394'Organic EL display device'20179,728,747'OLED with a flattening layer between two barrier layers'20179,728,748'OLED with a flattening layer between two barrier layers'20179,583,544'Organic EL display device'20179,466,813'OLED with a flattening layer between two barrier layers'20169,444,097'Positive electrode for nonaqueous electrolyte secondary battery, method for producing the same, and nonaqueous electrolyte secondary battery'20169,425,429'Organic EL display device'20169,278,408'Laser machining apparatus'20169,234,575'Shift switching device'20169,231,419'Semiconductor device and battery pack'20169,204,586'Electronic-circuit assembling process'20159,175,952'Shape measurement method and shape measurement apparatus for tires'20159,166,194'OLED with sporadic flattening layer between two barrier layers'20159,041,358'Semiconductor device for battery control and battery pack'20158,356,647'Pneumatic tire'20138,032,998'Manufacturing apparatus for a foil bearing'20117,955,792'Diluent for norovirus or sapovirus specimen and method for detecting virus'20117,414,907'Semiconductor memory device'20087,251,176'Semiconductor memory device'20077,102,947'Semiconductor memory device'20067,079,432'Semiconductor storage device formed to optimize test technique and redundancy technology'20066,876,588'Semiconductor storage device formed to optimize test technique and redundancy technology'20056,862,436'High frequency circuit board and antenna switch module for high frequency using the same'20056,856,561'Semiconductor memory device'20056,834,016'Semiconductor memory device having redundancy system'20046,741,509'Semiconductor storage device formed to optimize test technique and redundancy technology'20046,674,678'Sense amplifier control circuit of semiconductor memory device'20046,662,104'Navigation device'20036,646,932'Semiconductor memory device having redundancy system'20036,603,689'Semiconductor memory device having redundancy system'20036,552,960'Semiconductor integrated circuit device'20036,496,435'Sense amplifier control circuit of semiconductor memory device'20026,373,772'Semiconductor integrated circuit device having fuses and fuse latch circuits'20026,343,038'Semiconductor memory device of shared sense amplifier system'20026,272,061'Semiconductor integrated circuit device having fuses and fuse latch circuits'20016,055,197'Semiconductor memory device with simultaneously activated elements and a redundancy scheme thereof'20006,021,061'Semiconductor memory device'20005,991,211'Semiconductor memory device with redundancy control circuits'19995,979,303'Fryer'19995,969,998'MOS semiconductor device with memory cells each having storage capacitor and transfer transistor'19995,870,339'MOS semiconductor device with memory cells each having storage capacitor and transfer transistor'19995,638,329'MOS semiconductor device with memory cells each having storage capacitor and transfer transistor'19975,636,158'Irregular pitch layout for a semiconductor memory device'19975,426,604'MOS semiconductor device with memory cells each having storage capacitor and transfer transistor'19955,299,154'MOS semiconductor device with memory cells each having storage capacitor and transfer transistor'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–2021Patents assigned to TOSHIBA KK (27)· patent assignee history
1994–2021Based in Kawasaki, JP· patent location history
2002–2008Based in Kamakura, JP· patent location history
2011–2019Patents assigned to HONDA MOTOR CO LTD (4)· patent assignee history
2013–2016Patents assigned to KATO DAISUKE (4)· patent assignee history
2015–2020Patents assigned to JAPAN DISPLAY INC (21)· patent assignee history
2015–2020Based in Tokyo, JP· patent location history
2017–2020Based in Minato-ku, JP· patent location history
2018–2019Patents assigned to TOYODA GOSEI KK (7)· patent assignee history
2018–2019Based in Kiyosu, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 27 | 1994–2021 |
| JAPAN DISPLAY INC | 21 | 2015–2020 |
| TOYODA GOSEI KK | 7 | 2018–2019 |
| HONDA MOTOR CO LTD | 4 | 2011–2019 |
| KATO DAISUKEself | 4 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 16 | 2015–2020 |
| Kamakura, JP | 13 | 2002–2008 |
| Kawasaki, JP | 8 | 1994–2021 |
| Kiyosu, JP | 7 | 2018–2019 |
| Minato-ku, JP | 6 | 2017–2020 |