Inventor
Huicong Hong
Inventor
Niskayuna, NY, US
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth35%
Y10TTechnical subjects covered by former us classification18%
H10HInorganic light-emitting semiconductor devices having potential barriers12%
B82YSpecific uses or applications of nanostructures9%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light9%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry3%
G06KGraphical data reading3%
G06QInformation and communication technology [ict] specially adapted for administrative, commercial, financial, managerial or supervisory purposes3%
H01FMagnets3%
H04BTransmission3%
PatentTitleYear
10,902,390Electronic device and payment method using the same202110,208,396Crystalline gallium nitride containing flourine20199,279,193'Method of making a gallium nitride crystalline composition having a low dislocation density'20168,357,945'Gallium nitride crystal and method of making same'20137,859,008'Crystalline composition, wafer, device, and associated method'20107,786,503'Gallium nitride crystals and wafers and method of making'20107,704,324'Apparatus for processing materials in supercritical fluids and methods thereof'20107,642,122'Method for forming nitride crystals'20107,638,815'Crystalline composition, wafer, and semi-conductor structure'20097,582,498'Resonant cavity light emitting devices and associated method'20097,368,015'Apparatus for producing single crystal and quasi-single crystal, and associated method'20087,098,487'Gallium nitride crystal and method of making same'20067,078,731'Gallium nitride crystals and wafers and method of making'20067,009,215'Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2010Patents assigned to GEN ELECTRIC (4)· patent assignee history
2006–2019Based in Niskayuna, NY, US· patent location history
2008–2016Patents assigned to MOMENTIVE PERFORMANCE MAT INC (8)· patent assignee history
2013–2016Patents assigned to D EVELYN MARK PHILIP (2)· patent assignee history
2013–2016Patents assigned to HONG HUICONG (2)· patent assignee history
2013–2016Patents assigned to NARANG KRISTI JEAN (2)· patent assignee history
2021Based in Osan-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MOMENTIVE PERFORMANCE MAT INC | 8 | 2008–2016 |
| GEN ELECTRIC | 4 | 2006–2010 |
| D EVELYN MARK PHILIP | 2 | 2013–2016 |
| HONG HUICONGself | 2 | 2013–2016 |
| NARANG KRISTI JEAN | 2 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Niskayuna, New York, US | 13 | 2006–2019 |
| Osan-si, KR | 1 | 2021 |