Inventor
Kuan-Fu Chen
Inventor
Taipei, TW
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores28%
H10BElectronic memory devices20%
H10DInorganic electric semiconductor devices17%
H01LSemiconductor devices7%
G06FElectric digital data processing4%
H02PControl or regulation of electric motors, electric generators or dynamo-electric converters4%
B05DProcesses for applying fluent materials to surfaces, in general2%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form2%
C07CAcyclic or carbocyclic compounds2%
C07KPeptides2%
PatentTitleYear
11,078,502Method and cell line for production of polyketides in yeast202110,978,974Motor starting device and method202110,972,024Motor driving device and method202110,714,197Memory device and program verification method thereof202010,665,303Erasing blocks with few programmed pages202010,460,808Memory device and programming operation method thereof with different bit line voltages2019RE046970Diode-less array for one-time programmable memory201810,026,490Programming method for reducing a width of a threshold voltage distribution curve of memory cells20189,779,820'Non-volatile memory and programming method thereof'20179,613,702'NAND flash memory device with oblique architecture and memory cell array'20179,543,001'Programming memory cells'20179,437,319'Method for programming non-volatile memory with reduced bit line interference and associated device'20169,424,926'Reduced size semiconductor device and method for manufacture thereof'20169,286,984'Reduced size semiconductor device and method for manufacture thereof'20169,036,393'Diode-less array for one-time programmable memory'20158,836,004'Memory device'20148,779,500'Memory device'20148,593,850'Diode-less array for one-time programmable memory'20138,552,528'Diode-less array for one-time programmable memory'20138,183,106'Apparatus and associated method for making a floating gate memory device with buried diffusion dielectric structures and increased gate coupling ratio'20127,888,272'Methods for manufacturing memory and logic devices using the same process without the need for additional masks'20117,671,278'Cable having EMI-suppressing arrangement and method for making the same'20107,515,158'Modularly configurable memory system for LCD TV system'20097,486,534'Diode-less array for one-time programmable memory'2009Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2009–2020Patents assigned to MACRONIX INT CO LTD (19)· patent assignee history
2009–2020Based in Taipei, TW· patent location history
2009Based in Jhubei City, TW· patent location history
2010Based in Tu-Cheng, TW· patent location history
2012–2013Patents assigned to CHEN MING SHANG (2)· patent assignee history
2013–2014Patents assigned to CHEN KUAN-FU (4)· patent assignee history
2013–2014Patents assigned to HAN TZUNG-TING (3)· patent assignee history
2014–2021Based in Hsinchu, TW· patent location history
2021Patents assigned to ANPEC ELECTRONICS CORP (2)· patent assignee history
2021Based in Montreal, CA· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MACRONIX INT CO LTD | 19 | 2009–2020 |
| CHEN KUAN-FUself | 4 | 2013–2014 |
| HAN TZUNG-TING | 3 | 2013–2014 |
| ANPEC ELECTRONICS CORP | 2 | 2021 |
| CHEN MING SHANG | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Taipei, TW | 12 | 2009–2020 |
| Hsinchu, TW | 9 | 2014–2021 |
| Montreal, CA | 1 | 2021 |
| Tu-Cheng, TW | 1 | 2010 |
| Jhubei City, TW | 1 | 2009 |