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Inventor

Vincent M. McNeil

Inventor
Dallas, TX, US

Overview

6→
Patents
1992–2002
Patent span
Electricity
Primary field (CPC H)

Patents· 6 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1045%
H10DInorganic electric semiconductor devices36%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests18%
PatentTitleYear
6,429,455'Method to enhance the formation of nucleation sites on silicon structures and an improved silicon structure'20026,242,333'Method to enhance the formation of nucleation sites on silicon structures and an improved silicon structure'20016,093,659'Selective area halogen doping to achieve dual gate oxide thickness on a wafer'20005,793,083'Method for designing shallow junction, salicided NMOS transistors with decreased electrostatic discharge sensitivity'19985,129,982'Selective electrochemical etching'19925,129,981'Method of selectively etching silicon'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1992Patents assigned to GEN MOTORS CORP (2)· patent assignee history
1992Patents assigned to MASSACHUSETTS INST TECHNOLOGY (2)· patent assignee history
1992Based in Somerville, MA, US· patent location history
1998–2002Patents assigned to TEXAS INSTRUMENTS INC (4)· patent assignee history
1998–2002Based in Dallas, TX, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TEXAS INSTRUMENTS INC41998–2002
GEN MOTORS CORP21992
MASSACHUSETTS INST TECHNOLOGY21992
Locations
LocationPatentsSpan
Dallas, Texas, US41998–2002
Somerville, Massachusetts, US21992