Inventor
Karl Platzoeder
Inventor
Haimhausen, DE
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth17%
G01LMeasuring force, stress, torque, work, mechanical power, mechanical efficiency, or fluid pressure17%
H05KPrinted circuits17%
H10DInorganic electric semiconductor devices17%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests17%
PatentTitleYear
5,070,735'Pressure sensor'19914,992,851'Characteristic impedance-correct chip carrier for microwave semiconductor components'19914,119,441'Method for the production of n-doped silicon with a dish-shaped profile of specific resistance in a radial direction'19784,115,798'Semiconductor component having patterned recombination center means with different mean value of recombination centers on anode side from that on cathode side'1978Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1978–1991Patents assigned to SIEMENS AG (4)· patent assignee history
1978–1991Based in Haimhausen, DE· patent location history
1978Based in Haimhaussen, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SIEMENS AG | 4 | 1978–1991 |
Locations
| Location | Patents | Span |
|---|---|---|
| Haimhausen, DE | 3 | 1978–1991 |
| Haimhaussen, DE | 1 | 1978 |