LexDanaLexDanabeta
Inventor

Mutsuko Hatano

Inventor
Kokubunji, JP

Overview

84→
Patents
1989–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 84 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices32%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein15%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
B23KSoldering or unsoldering6%
H10NElectric solid-state devices not otherwise provided for6%
H10KOrganic electric solid-state devices3%
G09GArrangements or circuits for control of indicating devices using static means to present variable information2%
C30BSingle-crystal growth2%
H01LSemiconductor devices2%
PatentTitleYear
10,324,142Diamond crystal, diamond devices, magnetic sensor, magnetic sensor system, and method for manufacturing sensor array201910,068,932Display device20189,478,619'Diamond semiconductor device and method for manufacturing same'20168,963,171'Image display device and the method for manufacturing the same'20158,802,511'Display device'20148,759,126'Image display device and the method for manufacturing the same'20148,638,313'Electrostatic capacitance type touch panel and screen input display device including the same'20148,629,451'Display device'20148,599,346'Image display device and manufacturing method thereof'20138,482,003'Image display unit'20138,377,742'Thin film transistor and method for manufacturing the same'20138,344,382'Semiconductor device, manufacturing method thereof, and display apparatus using the semiconductor device'20138,338,867'Highly sensitive photo-sensing element and photo-sensing device using the same'20128,314,032'Semiconductor device and method for manufacturing the same'20128,294,869'Image display'20128,258,024'Display device and method of manufacturing the same'20128,259,280'Image display device and manufacturing method thereof'20128,242,505'Display device'20128,199,269'Method for manufacturing thin film transistors'20128,139,173'Liquid crystal display'20127,981,701'Semiconductor thin film manufacturing method'20117,977,675'Semiconductor device and method for manufacturing the same'20117,969,520'Liquid crystal display device and dielectric film usable in the liquid crystal display device'20117,939,826'Thin film semiconductor device'20117,902,003'Semiconductor device and method for manufacturing the same'20117,859,016'Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus'20107,834,353'Method of manufacturing display device'20107,755,142'Thin-film transistor and image display device'20107,737,517'Display device'20107,666,769'Method for fabricating image display device'20107,586,554'Liquid crystal display device and dielectric film usable in the liquid crystal display device'20097,569,439'Thin film semiconductor device, production process and information displays'20097,556,993'Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus'20097,456,428'Manufacturing method of semiconductor film and image display device'20087,456,913'LCD with first and second circuit regions each with separately optimized transistor properties'20087,442,958'Thin film semiconductor device'20087,397,831'Laser annealing apparatus and annealing method of semiconductor thin film using the same'20087,384,810'Image display device and method for manufacturing the same'20087,372,110'Display with integral sound wave generation device'20087,335,915'Image displaying device and method for manufacturing same'20087,326,623'Method of manufacturing display device'20087,262,821'LCD with first and second circuit regions each with separately optimized transistor properties'20077,256,423'Thin film semiconductor device'20077,253,864'Active matrix display device with active element including a semiconductor film formed of an aggregate of single crystals each extending in the same direction'20077,202,144'Manufacturing method of semiconductor film and image display device'20077,193,693'Apparatus for manufacturing flat panel display devices'20077,192,852'Method for fabricating image display device'20077,193,238'Display device and a method for manufacturing the same'20077,183,148'Display panel and method for manufacturing the same'20077,172,932'Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus'20077,132,343'Method and apparatus for manufacturing display panel'20067,129,124'Display device, process of fabricating same, and apparatus for fabricating same'20067,115,454'Thin film semiconductor device, polycrystalline semiconductor thin film production and process and production apparatus'20067,102,170'Display device'20067,084,020'Manufacturing method of a thin-film semiconductor device'20067,023,500'Display device with active-matrix transistor having silicon film modified by selective laser irradiation'20066,969,871'Thin film semiconductor device'20056,949,452'Method for fabricating image display device'20056,949,419'Display device and a method for manufacturing the same'20056,943,086'Laser annealing apparatus, TFT device and annealing method of the same'20056,903,368'Thin-film transistor device, its manufacturing process, and image display using the device'20056,872,977'Thin film semiconductor device, production process and information displays'20056,847,069'Thin-film semiconductor device, manufacturing method of the same and image display apparatus'20056,756,614'Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus'20046,716,726'Thin film semiconductor device containing polycrystalline SiGe alloy and method for producing thereof'20046,713,324'Display device and a method for manufacturing the same'20046,690,064'Thin-film semiconductor device containing poly-crystalline Si-Ge alloy and method for producing thereof'20046,670,936'Liquid crystal display'20036,635,932'Thin film crystal growth by laser annealing'20036,521,909'Thin film semiconductor device containing polycrystalline Si-Ge alloy and method for producing thereof'20036,501,095'Thin film transistor'20026,451,631'Thin film crystal growth by laser annealing'20026,069,369'Superconducting device'20005,729,046'Superconducting device having pinning regions'19985,552,375'Method for forming high T.sub.c superconducting devices'19965,550,389'Superconducting device'19965,442,195'Superconducting device including plural superconducting electrodes formed on a normal conductor'19955,326,745'Superconducting device with C-axis orientation perpendicular to current flow'19945,317,168'Superconducting field effect transistor'19945,272,358'Superconducting device'19935,256,897'Oxide superconducting device'19935,126,315'High Tc superconducting device with weak link between two superconducting electrodes'19925,057,485'Light detecting superconducting Josephson device'19914,866,373'Superconducting current detecting circuit employing DC flux parametron circuit'1989

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989–2013Patents assigned to HITACHI LTD (45)· patent assignee history
1989–2000Based in Kodaira, JP· patent location history
2002–2018Based in Kokubunji, JP· patent location history
2002–2003Based in Palo Alto, CA, US· patent location history
2006–2013Patents assigned to HITACHI DISPLAYS LTD (28)· patent assignee history
2006–2007Based in Kokubuji, JP· patent location history
2007–2019Based in Tokyo, JP· patent location history
2012–2015Patents assigned to HATANO MUTSUKO (16)· patent assignee history
2012–2018Patents assigned to PANASONIC LIQUID CRYSTAL DISPL (15)· patent assignee history
2013–2018Patents assigned to JAPAN DISPLAY INC (7)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD451989–2013
HITACHI DISPLAYS LTD282006–2013
HATANO MUTSUKOself162012–2015
PANASONIC LIQUID CRYSTAL DISPL152012–2018
JAPAN DISPLAY INC72013–2018
Locations
LocationPatentsSpan
Kokubunji, JP642002–2018
Kodaira, JP121989–2000
Tokyo, JP42007–2019
Kokubuji, JP22006–2007
Palo Alto, California, US22002–2003