Inventor

CHII-HORNG LI

Inventor

TW

Overview

2021–2026

Patent span

Electricity

Primary field (CPC H)

Patents· 48 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices31%

H01LSemiconductor devices28%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%

B82YSpecific uses or applications of nanostructures9%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%

B23QDetails, components, or accessories for machine tools, e.g. arrangements for copying or controlling1%

C23CCoating metallic material1%

C30BSingle-crystal growth1%

PatentTitleYear

12,588,258Stacked transistor isolation features and methods of forming the same2026 12,557,367Source/drain regions formed using metal containing block masks2026 12,532,518Transistor source/drain regions and methods of forming the same2026 12,507,446—2025 12,477,794Semiconductor device and manufacturing method thereof2025 12,471,311Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layer2025 12,402,344FETS and methods of forming FETS2025 12,396,209Semiconductor device and method2025 12,396,242Nano-structure transistors with air inner spacers and methods forming same2025 12,336,237Source/drain regions of semiconductor device and method of forming the same2025 12,336,210Source/drain structure for semiconductor device2025 12,278,145Semiconductor devices with a source/drain barrier layer and methods of manufacture2025 12,243,783Epitaxial source/drain recess formation with metal-comprising masking layers and structures resulting therefrom2025 12,191,393Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reduction2025 12,159,925Semiconductor device and method2024 12,094,778Fin field-effect transistor device and method of forming2024 12,094,761FETs and methods of forming FETs2024 12,087,845System and methods of manufacturing semiconductor devices2024 12,068,395Method for forming an undoped region under a source/drain2024 12,057,450Epitaxy regions with large landing areas for contact plugs2024 12,002,854Semiconductor device and method of manufacture2024 11,948,999Semiconductor device2024 11,942,550Nanosheet semiconductor device and method for manufacturing the same2024 11,855,142Supportive layer in source/drains of FinFET devices2023 11,854,901Semiconductor method and device2023 11,824,120Method of fabricating a source/drain recess in a semiconductor device2023 11,773,506Wafer susceptor with improved thermal characteristics2023 11,749,752Doping profile for strained source/drain region2023 11,735,660Method of forming semiconductor device2023 11,735,668Interfacial layer between fin and source/drain region2023 11,728,208FETS and methods of forming FETS2023 11,710,777Semiconductor device and method for manufacture2023 11,652,105Epitaxy regions with large landing areas for contact plugs2023 11,600,715FETs and methods of forming FETs2023 11,581,425Method for manufacturing semiconductor structure with enlarged volumes of source-drain regions2023 11,575,026Source/drain structure for semiconductor device2023 11,569,084Method for manufacturing semiconductor structure with reduced nodule defects2023 11,482,620Interfacial layer between Fin and source/drain region2022 11,476,331Supportive layer in source/drains of FinFET devices2022 11,437,515Source and drain stressors with recessed top surfaces2022 11,437,497Semiconductor device and method2022 11,430,878Method for fabricating semiconductor device2022 11,411,109MOS devices having epitaxy regions with reduced facets2022 11,367,660Semiconductor method and device2022 11,264,237Method of epitaxy and semiconductor device2022 11,257,951Method of making semiconductor device having first and second epitaxial materials2022 11,211,470Semiconductor device and method2021 11,205,713FinFET having a non-faceted top surface portion for a source/drain region2021

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (48)· patent assignee history

2021–2026Based in TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
TAIWAN SEMICONDUCTOR MFG CO LTD	48	2021–2026

Locations

Location	Patents	Span
TW	48	2021–2026