LexDanaLexDanabeta
Inventor

Jen-Chou Tseng

Inventor
Jhudong Township, TW

Overview

57→
Patents
2007–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 57 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices35%
H01LSemiconductor devices26%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H02HEmergency protective circuit arrangements6%
G01RMeasuring electric variables3%
G11CStatic stores3%
H03KPulse technique1%
H10BElectronic memory devices1%
H03FAmplifiers1%
PatentTitleYear
10,868,112Circuit device including guard ring and method of forming guard ring202010,854,501Structure and method for enhancing robustness of ESD device202010,803,967Memory device with a fuse protection circuit202010,756,082Method of forming electrostatic discharge (ESD) testing structure202010,643,726Memory device with a fuse protection circuit202010,629,588ESD hard backend structures in nanometer dimension202010,546,850FinFET-based ESD devices and methods for forming the same202010,325,906ESD testing structure, method of using same and method of forming same201910,284,190Voltage detector circuits and methods201910,283,210Memory device with a fuse protection circuit201910,269,986Rotated STI diode on FinFET technology201910,170,461ESD hard backend structures in nanometer dimension201910,163,894FinFET-based ESD devices and methods for forming the same201810,163,823Method and apparatus of ESD protection in stacked die semiconductor device201810,158,225ESD protection system utilizing gate-floating scheme and control circuit thereof201810,128,329Method of forming guard ring structure201810,109,366Memory device with a fuse protection circuit201810,096,589Fin ESD protection diode and fabrication method thereof201810,074,745Ultra high voltage device201810,026,640Structure and method for enhancing robustness of ESD device201810,026,727FinFET-based ESD devices and methods for forming the same20189,979,186Electrostatic discharge protection for three dimensional integrated circuit20189,917,079'Electrostatic discharge protection circuit and method for radio frequency circuit'20189,893,052'FinFET-based ESD devices and methods for forming the same'20189,842,833'Electrostatic discharge protection'20179,666,713'Ultra high voltage device'20179,620,957'Electrostatic discharge (ESD) control circuit'20179,608,616'Power clamp circuits and methods'20179,559,008'FinFET-based ESD devices and methods for forming the same'20179,537,306'ESD protection system utilizing gate-floating scheme and control circuit thereof'20179,472,666'Ultra high voltage device'20169,450,044'Guard ring structure and method of forming the same'20169,443,850'Epitaxial growth between gates'20169,443,840'Methods and apparatus for ESD structures'20169,407,089'Electrical discharge protection circuit and method of use'20169,397,098'FinFET-based ESD devices and methods for forming the same'20169,368,487'Semiconductor device with dynamic low voltage triggering mechanism'20169,362,252'Method and apparatus of ESD protection in stacked die semiconductor device'20169,318,621'Rotated STI diode on FinFET technology'20169,312,384'FinFET body contact and method of making same'20169,281,681'ESD protection circuits and methods'20169,236,733'Electrostatic discharge protection'20169,190,519'FinFET-based ESD devices and methods for forming the same'20159,172,242'Electrostatic discharge protection for three dimensional integrated circuit'20159,117,669'Apparatus for ESD protection'20158,928,093'FinFET body contact and method of making same'20158,921,943'Methods and apparatus for ESD structures'20148,823,129'Latch-up prevention structure and method for ultra-small high voltage tolerant cell'20148,809,905'Vertical BJT and SCR for ESD'20148,779,518'Apparatus for ESD protection'20148,779,517'FinFET-based ESD devices and methods for forming the same'20148,735,993'FinFET body contact and method of making same'20148,730,626'Electrostatic discharge protection'20148,692,289'Fast turn on silicon controlled rectifiers for ESD protection'20148,664,723'Integrated circuit structures having base resistance tuning regions and methods for forming the same'20147,329,925'Device for electrostatic discharge protection'20087,161,192'Silicon controlled rectifier'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2020Based in Hsinchu County, TW· patent location history
2008–2017Based in Hsinchu, TW· patent location history
2014–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (18)· patent assignee history
2014Patents assigned to TSENG JEN-CHOU (6)· patent assignee history
2014Patents assigned to LIN WUN-JIE (3)· patent assignee history
2014Patents assigned to LO CHING-HSIUNG (3)· patent assignee history
2014–2020Based in Jhudong Township, TW· patent location history
2015–2020Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (38)· patent assignee history
2016Based in Taiwan, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD382015–2020
TAIWAN SEMICONDUCTOR MFG182014–2016
TSENG JEN-CHOUself62014
LIN WUN-JIE32014
LO CHING-HSIUNG32014
Locations
LocationPatentsSpan
Jhudong Township, TW412014–2020
Hsinchu County, TW132007–2020
Hsinchu, TW22008–2017
Taiwan, CN12016