Inventor
Tomohiro Shonai
Inventor
Hikone, JP
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth27%
H01LSemiconductor devices18%
H10DInorganic electric semiconductor devices18%
C01BNon-metallic elements9%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds9%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
PatentTitleYear
10,988,857SiC single crystal growth apparatus containing movable heat-insulating material and growth method of SiC single crystal using the same202110,724,152Method for producing SiC single crystal, SiC single crystal, and SiC ingot202010,236,338SiC single crystal seed, SiC ingot, SiC single crystal seed production method, and SiC single crystal ingot production method20196,937,630'Laser oscillation method and laser device'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005Patents assigned to MEGAOPTO CO LTD (1)· patent assignee history
2005Based in Sapporo, JP· patent location history
2019–2021Patents assigned to SHOWA DENKO KK (3)· patent assignee history
2019–2021Based in Hikone, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHOWA DENKO KK | 3 | 2019–2021 |
| MEGAOPTO CO LTD | 1 | 2005 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hikone, JP | 3 | 2019–2021 |
| Sapporo, JP | 1 | 2005 |