Inventor
Kwang-Ming Lin
Inventor
Hsinchu, TW
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1028%
H10DInorganic electric semiconductor devices17%
H01LSemiconductor devices15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation9%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
Y02PClimate change mitigation technologies in the production or processing of goods4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
C23CCoating metallic material2%
G02BOptical elements, systems or apparatus2%
PatentTitleYear
10,770,602Optical sensor and method for forming the same202010,763,288Semiconductor device and method for forming the same20209,443,943'Semiconductor device and fabrication method thereof'20169,385,260'Apparatus and methods for forming thin film solar cell materials'20169,142,671'Lateral double-diffused metal oxide semiconductor'20159,112,065'Method of curing solar cells to reduce lamination induced efficiency loss'20158,921,202'Semiconductor device and fabrication method thereof'20147,821,082'Method for increasing breaking down voltage of lateral diffused metal oxide semiconductor transistor'20107,745,343'Method for fabricating semiconductor device with fuse element'20106,667,230'Passivation and planarization process for flip chip packages'20036,664,177'Dielectric ARC scheme to improve photo window in dual damascene process'20036,635,576'Method of fabricating borderless contact using graded-stair etch stop layers'20036,551,927'CoSix process to improve junction leakage'20036,455,382'Multi-step method for forming sacrificial silicon oxide layer'20026,316,368'Method of fabricating a node contact'20016,083,828'Method for forming a self-aligned contact'20005,461,254'Method and resulting device for field inversion free multiple layer metallurgy VLSI processing'19955,334,554'Nitrogen plasma treatment to prevent field device leakage in VLSI processing'19945,252,515'Method for field inversion free multiple layer metallurgy VLSI processing'19935,248,384'Rapid thermal treatment to eliminate metal void formation in VLSI manufacturing process'1993Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1993–2003Patents assigned to TAIWAN SEMICONDUCTOR MFG (9)· patent assignee history
1993–2016Based in Hsinchu, TW· patent location history
2002Based in Hsin Chu, TW· patent location history
2010–2020Patents assigned to VANGUARD INT SEMICONDUCT CORP (7)· patent assignee history
2014–2015Patents assigned to LIN KWANG-MING (2)· patent assignee history
2014Patents assigned to CHANG JUI-CHUN (1)· patent assignee history
2015–2016Patents assigned to TSMC SOLAR LTD (2)· patent assignee history
2020Based in Taichung, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 9 | 1993–2003 |
| VANGUARD INT SEMICONDUCT CORP | 7 | 2010–2020 |
| LIN KWANG-MINGself | 2 | 2014–2015 |
| TSMC SOLAR LTD | 2 | 2015–2016 |
| CHANG JUI-CHUN | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 17 | 1993–2016 |
| Taichung, TW | 2 | 2020 |
| Hsin Chu, TW | 1 | 2002 |