Inventor
Young-gu Jin
Inventor
Hwaseong-si, KR
Overview
Patents· 91 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H04Nprimary
H04NPictorial communication, e.g. television16%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation15%
H01LSemiconductor devices8%
G01SRadio direction-finding8%
H10BElectronic memory devices5%
G11CStatic stores5%
H10DInorganic electric semiconductor devices5%
B82YSpecific uses or applications of nanostructures4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
G06TImage data processing or generation, in general3%
PatentTitleYear
10,991,7483D image sensor202110,950,640Image sensor202110,931,905Pixel array included in three-dimensional image sensor and method of operating three-dimensional image sensor202110,868,070Image sensors with multiple lenses per pixel region202010,868,059Image sensors for distance measurement202010,861,886Image sensor and image processing system having pixel structure to improve demodulation contrast performance202010,840,292Semiconductor devices including infrared sensor with infrared photodiode and color sensor with color photodiode202010,784,294Image sensor including multi-tap pixel202010,707,261Semiconductor devices including infrared sensor with infrared photodiode and color sensor with color photodiode202010,529,755Image sensor having a photoelectric conversion layer coupled to a storage node through a pinning layer with P-type impurities202010,388,682Image sensor for measuring distance201910,283,554Semiconductor devices including first sensor with infrared photodiode and second sensor with color photodiode201910,212,367Image sensor and electronic device including the same201910,186,045Methods of and apparatuses for recognizing motion of objects, and associated systems201910,171,790Depth sensor, image capture method, and image processing system using depth sensor201910,101,874Apparatus and method for controlling user interface to select object within image and image input device20189,894,301'CMOS image sensors with photogate structures and sensing transistors, operation methods thereof, and image processing systems including the same'20189,838,573Method for guiding controller to move to within recognizable range of multimedia apparatus, the multimedia apparatus, and target tracking apparatus thereof20179,829,983Mobile systems including image sensors, methods of operating image sensors, and methods of operating mobile systems20179,800,814'Image sensor, method of operating the same, and image processing system including the same'20179,773,164'Apparatus and method for recognizing human body in hybrid manner'20179,715,740'Methods of and apparatuses for recognizing motion of objects, and associated systems'20179,711,675'Sensing pixel and image sensor including the same'20179,621,868'Depth sensor, image capture method, and image processing system using depth sensor'20179,594,945'Method and apparatus for protecting eyesight'20179,462,199'Image sensors, image processing systems including same, and methods of operating the same'20169,432,604'Image sensor chips'20169,406,714'Unit pixel with photodiode under gate of sensing transistor and image pixel array including the same'20169,380,242'Image sensor and devices having the same'20169,357,142'Image sensor and image processing system including subpixels having a transfer circuit, comparator and counter for outputting the count value as the subpixel signal'20169,343,492'CMOS image sensor based on thin-film on asic and operating method thereof'20169,177,987'Binary CMOS image sensors, methods of operating same, and image processing systems including same'20159,167,230'Image sensor for simultaneously obtaining color image and depth image, method of operating the image sensor, and image processing system including the image sensor'20159,106,858'Image sensor, method of operating the same, and image processing system including the same'20159,103,663'Depth sensor, method of calculating depth in the same'20159,046,358'Sensor, method of operating the same, and system including the same'20159,025,829'Image sensor, operation method thereof and apparatuses including the same'20158,976,277'Image sensors'20158,953,152'Depth sensors, depth information error compensation methods thereof, and signal processing systems having the depth sensors'20158,937,711'Sensor and method using the same'20158,835,826'Pixel Circuit, depth sensor having dual operating mode for high and low incident light and operating method'20148,803,273'High sensitivity image sensors'20148,648,945'Image sensors for sensing object distance information based on clock signals'20148,645,099'Depth sensor, depth estimation method using the same, and depth estimation device including the same'20148,599,291'Color filter array, image sensor having the same, and signal interpolating method'20138,581,964'Three-dimensional image sensors and methods of manufacturing the same'20138,558,256'Light emitting diode using semiconductor nanowire and method of fabricating the same'20138,546,901'High sensitivity image sensors including a single electron field effect transistor and methods of operating the same'20138,520,104'Image sensor devices having dual-gated charge storage regions therein'20138,513,709'Photo detecting apparatus and unit pixel thereof'20138,482,722'Delay compensation in modulated optical time-of-flight phase estimation'20138,373,782'Image sensor including noise removing unit, image pickup device having the image sensor, and image sensing method performed in the image sensor'20138,354,286'Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device'20138,294,880'Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor'20128,283,711'Non-volatile memory devices having data storage layer'20128,217,401'Light emitting device using nano size needle'20128,193,497'Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same'20128,154,640'Sub-pixels, unit pixels, image sensors and methods of operating the same'20128,148,762'Photodiodes, image sensing devices and image sensors'20128,143,685'Image sensor having nanodot'20128,130,442'Optical amplifying medium, method of manufacturing the optical amplifying medium, and optical device comprising the optical amplifying medium'20128,119,480'Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same'20128,058,701'Antifuse structures, antifuse array structures, methods of manufacturing the same'20118,053,822'Capacitorless DRAM and methods of manufacturing and operating the same'20118,035,806'Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor'20118,004,906'Nonvolatile memory device and method of operating and fabricating the same'20117,995,396'Methods of operating memory devices'20117,977,707'Capacitorless DRAM having a hole reserving unit'20117,948,019'Nonvolatile memory devices and methods of operating the same'20117,933,143'Capacitorless DRAM and methods of operating the same'20117,929,351'Method for reducing lateral movement of charges and memory device thereof'20117,919,786'Nanowire light emitting device'20117,863,672'Non-volatile memory device and method of fabricating the same'20117,839,694'Nonvolatile memory devices and data reading methods'20107,829,937'Semiconductor memory devices performing erase operation using erase gate and methods of manufacturing the same'20107,813,185'Nonvolatile memory device and method of operating and fabricating the same'20107,787,302'Flash memory device, method of manufacturing the same, and method of operating the same'20107,754,508'Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device'20107,750,353'Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device'20107,729,164'Non-volatile memory device, method of operating the same, and method of fabricating the same'20107,700,953'Light-emitting device using nano size needle'20107,679,960'Non-volatile memory device and method of operating the same'20107,626,685'Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors'20097,580,190'Micro lens array and method of manufacturing the same'20097,504,128'Method of fabricating one-way transparent optical system'20097,453,097'Nanowire light emitting device and method of fabricating the same'20087,435,996'Nanowire light emitting device and method of fabricating the same'20087,358,524'Nanowire device and method of fabricating the same'20087,332,852'One-way transparent optical system having light absorption elements and light refracting structures'20087,273,682'Solid electrolyte, method for preparing the same, and battery using the same'20077,220,517'Solid electrolyte and battery employing the same'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2021Patents assigned to SAMSUNG ELECTRONICS CO LTD (87)· patent assignee history
2007–2018Based in Gyeonggi-do, KR· patent location history
2008–2015Based in Hwaseong-si, KR· patent location history
2008–2021Based in Suwon-si, KR· patent location history
2010–2013Based in Yongin-si, KR· patent location history
2011–2017Patents assigned to JIN YOUNG-GU (21)· patent assignee history
2011–2017Patents assigned to PARK YOON-DONG (16)· patent assignee history
2013–2018Patents assigned to JIN YOUNG GU (16)· patent assignee history
2013–2018Patents assigned to MIN DONG KI (8)· patent assignee history
2014–2019Based in Osan-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 87 | 2007–2021 |
| JIN YOUNG-GUself | 21 | 2011–2017 |
| JIN YOUNG GUself | 16 | 2013–2018 |
| PARK YOON-DONG | 16 | 2011–2017 |
| MIN DONG KI | 8 | 2013–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hwaseong-si, KR | 35 | 2008–2015 |
| Osan-si, KR | 24 | 2014–2019 |
| Suwon-si, KR | 17 | 2008–2021 |
| Gyeonggi-do, KR | 7 | 2007–2018 |
| Yongin-si, KR | 6 | 2010–2013 |