Inventor
Karthick Murukesan
Inventor
Hsinchu, TW
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices32%
H10DInorganic electric semiconductor devices32%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H03KPulse technique5%
PatentTitleYear
10,964,781High voltage resistor device202110,892,360Semiconductor device structure with high voltage device202110,879,236Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device202010,679,987Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) device202010,535,730High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device202010,297,661High voltage resistor device20199,680,009'High voltage semiconductor device'2017Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2017–2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (7)· patent assignee history
2017–2021Based in Hsinchu, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 7 | 2017–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 7 | 2017–2021 |