Inventor
CHUN-HENG CHEN
Inventor
TW
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices35%
H01LSemiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
B82YSpecific uses or applications of nanostructures7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
PatentTitleYear
12,563,797Semiconductor device structure and method for forming the same202612,501,697Methods of forming semiconductor devices202512,376,344Semiconductor device comprising channel layers with different thicknesses202512,336,248Non-conformal gate oxide formation on FinFET202512,336,211Dielectric layer on semiconductor device and method of forming the same202512,310,074NanoStructure field-effect transistor device and methods of forming202512,278,267Semiconductor devices having funnel-shaped gate structures202512,218,197Gate oxide of nanostructure transistor with increased corner thickness202512,199,158Non-conformal oxide liner and manufacturing methods thereof202512,046,660Non-conformal capping layer and method forming same202412,015,031Semiconductor device and method202411,990,509Semiconductor devices having gate structures with slanted sidewalls202411,942,556Semiconductor device and manufacturing method thereof202411,855,140Gate oxide of nanostructure transistor with increased corner thickness202311,855,095Semiconductor device202311,640,977Non-conformal oxide liner and manufacturing methods thereof202311,532,718FinFET having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the fins202211,469,229Semiconductor device and method202211,437,491Non-conformal capping layer and method forming same202211,430,865Semiconductor device and method202211,296,084Deposition method, semiconductor device and method of fabricating the same2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (21)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 21 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 21 | 2022–2026 |