Inventor
Jeremiah T. P. Pender
Inventor
San Jose, CA, US
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1035%
H01JElectric discharge tubes or discharge lamps21%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
H01LSemiconductor devices16%
H05HPlasma technique6%
B08BCleaning in general2%
H05KPrinted circuits2%
H10NElectric solid-state devices not otherwise provided for2%
PatentTitleYear
9,721,807'Cyclic spacer etching process with improved profile control'20179,543,163'Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process'20179,514,953'Methods for barrier layer removal'20169,478,433'Cyclic spacer etching process with improved profile control'20169,299,577'Methods for etching a dielectric barrier layer in a dual damascene structure'20169,165,783'Method of patterning a low-k dielectric film'20159,093,389'Method of patterning a silicon nitride dielectric film'20158,980,758'Methods for etching an etching stop layer utilizing a cyclical etching process'20158,980,754'Method of removing a photoresist from a low-k dielectric film'20158,932,959'Method and system for etching plural layers on a workpiece including a lower layer containing an advanced memory material'20158,802,572'Method of patterning a low-k dielectric film'20148,748,322'Silicon oxide recess etch'20148,647,990'Method of patterning a low-K dielectric film'20148,314,033'Method of patterning a low-k dielectric film'20128,143,138'Method for fabricating interconnect structures for semiconductor devices'20127,848,898'Method for monitoring process drift using plasma characteristics'20107,620,511'Method for determining plasma characteristics'20097,575,007'Chamber recovery after opening barrier over copper'20097,440,859'Method for determining plasma characteristics'20087,309,448'Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material'20077,300,597'Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material'20077,286,948'Method for determining plasma characteristics'20076,440,864'Substrate cleaning process'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2017Patents assigned to APPLIED MATERIALS INC (23)· patent assignee history
2002–2017Based in San Jose, CA, US· patent location history
2012–2015Patents assigned to NEMANI SRINIVAS D (4)· patent assignee history
2012–2015Patents assigned to DOAN KHOI (3)· patent assignee history
2012–2015Patents assigned to ZHOU YIFENG (3)· patent assignee history
2014–2015Patents assigned to PENDER JEREMIAH T (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| APPLIED MATERIALS INC | 23 | 2002–2017 |
| NEMANI SRINIVAS D | 4 | 2012–2015 |
| DOAN KHOI | 3 | 2012–2015 |
| ZHOU YIFENG | 3 | 2012–2015 |
| PENDER JEREMIAH Tself | 2 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 23 | 2002–2017 |