Inventor
Christopher L. Chua
Inventor
San Jose, CA, US
Overview
Patents· 135 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light12%
H10HInorganic light-emitting semiconductor devices having potential barriers12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
B82YSpecific uses or applications of nanostructures7%
H01LSemiconductor devices7%
H01FMagnets4%
H10DInorganic electric semiconductor devices4%
H05KPrinted circuits4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
PatentTitleYear
11,054,593Chip-scale optoelectronic transceiver with microspringed interposer202110,969,205Electrically-activated pressure vessels for fracturing frangible structures202110,955,520Computer-implemented system and method for object tracking via identifier-tracker pairings202110,950,406Self-limiting electrical triggering for initiating fracture of frangible glass202110,903,173Pre-conditioned substrate202110,903,176Method of forming a photodiode202110,875,343Expanding the color gamut of thermochromic materials202010,839,957Computer-implemented system and method for tracking entity locations and generating histories from the locations202010,717,299Processing of color thermochromic materials202010,649,243Expanded color gamut for thermochromic color processing202010,634,760Computer-implemented system and method for object tracking via identifier-tracker pairings202010,583,678Single step processing of color thermochromic materials202010,583,669Method and system for producing stable locked colors in thermochromic materials202010,481,404Rectangular cavity optical beam shaper and method of manufacturing the same201910,332,717Self-limiting electrical triggering for initiating fracture of frangible glass201910,249,793Transparent electron blocking hole transporting layer201910,224,297Sensor and heater for stimulus-initiated fracture of a substrate201910,164,146P-side layers for short wavelength light emitters201810,109,410Out of plane structures and methods for making out of plane structures201810,056,477Nitride heterojunction bipolar transistor with polarization-assisted alloy hole-doped short-period superlattice emitter or collector layers201810,026,579Self-limiting electrical triggering for initiating fracture of frangible glass201810,008,629Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction20189,955,575Out of plane structures and methods for making out of plane structures20189,912,121'Gap distributed Bragg reflectors'20189,882,089'Transparent electron blocking hole transporting layer'20189,859,468'Small-sized light-emitting diode chiplets and method of fabrication thereof'20189,638,787'Computer-implemented system and method for tracking objects via identifier-tracker pairings'20179,640,732'Small-sized light-emitting diode chiplets and method of fabrication thereof'20179,630,424'VCSEL-based variable image optical line generator'20179,600,208'Passive detector with nonvolatile memory storage'20179,577,047'Integration of semiconductor epilayers on non-native substrates'20179,444,224'Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer'20169,419,194'Transparent electron blocking hole transporting layer'20169,401,452'P-side layers for short wavelength light emitters'20169,335,262'Gap distributed Bragg reflectors'20169,252,329'Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction'20169,219,189'Graded electron blocking layer'20159,171,992'Ultraviolet light emitting device incorporating optically absorbing layers'20159,166,375'Vertical surface emitting semiconductor device'20159,099,344'Fabrication for electroplating thick metal pads'20159,064,980'Devices having removed aluminum nitride sections'20158,964,796'Structure for electron-beam pumped edge-emitting device and methods for producing same'20158,908,161'Removing aluminum nitride sections'20148,852,980'Laser-induced flaw formation in nitride semiconductors'20148,822,314'Method of growing epitaxial layers on a substrate'20148,748,919'Ultraviolet light emitting device incorporating optically absorbing layers'20148,652,878'Stress-engineered interconnect packages with activator-assisted molds'20148,581,263'Laser-induced flaw formation in nitride semiconductors'20138,571,817'Integrated vapor delivery systems for chemical vapor deposition precursors'20138,513,643'Mixed alloy defect redirection region and devices including same'20138,470,619'Selective decomposition of nitride semiconductors to enhance LED light extraction'20138,468,939'Printing system employing deformable polymer printing plates'20138,405,198'Stress-engineered interconnect packages with activator-assisted molds'20138,399,296'Airgap micro-spring interconnect with bonded underfill seal'20138,354,689'Light emitting devices having dopant front loaded tunnel barrier layers'20138,330,144'Semi-polar nitride-based light emitting structure and method of forming same'20128,318,542'Contact spring application to semiconductor devices'20128,247,249'Semi-polar nitride-based light emitting structure and method of forming same'20128,183,649'Buried aperture nitride light-emitting device'20128,143,647'Relaxed InGaN/AlGaN templates'20128,143,154'Relaxed InGaN/AlGaN templates'20128,124,993'Selective decomposition of nitride semiconductors to enhance LED light extraction'20128,048,703'Light emitting devices with inhomogeneous quantum well active regions'20118,039,938'Airgap micro-spring interconnect with bonded underfill seal'20118,023,546'Semiconductor laser with integrated contact and waveguide'20118,023,544'Semiconductor light emitting devices with non-epitaxial upper cladding'20118,000,371'Vertical surface emitting semiconductor device'20118,000,366'Laser diode with high indium active layer and lattice matched cladding layer'20117,987,784'Printing system employing deformable polymer printing plates'20117,982,290'Contact spring application to semiconductor devices'20117,872,272'Nitride semiconductor ultraviolet LEDs with tunnel junctions and reflective contact'20117,858,521'Fabrication for electroplating thick metal pads'20107,856,040'Semiconductor light emitting devices with non-epitaxial upper cladding'20107,851,242'Monolithic white and full-color light emitting diodes using optically pumped multiple quantum wells'20107,843,982'High power semiconductor device to output light with low-absorbtive facet window'20107,812,421'Light emitting devices with an electrically active top reflector contact'20107,764,721'System for adjusting the wavelength light output of a semiconductor device using hydrogenation'20107,749,782'Laser roughening to improve LED emissions'20107,733,397'Sensor surface with 3D curvature formed by electronics on a continuous 2D flexible substrate'20107,723,719'Light emitting devices with inhomogeneous quantum well active regions'20107,718,455'Method of forming a buried aperture nitride light emitting device'20107,714,340'Nitride light-emitting device'20107,713,388'Out-of-plane spring structures on a substrate'20107,688,876'Self-forming microlenses for VCSEL arrays'20107,596,161'Laterally oxidized vertical cavity surface emitting lasers'20097,526,007'Buried lateral index guided lasers and lasers with lateral current blocking layers'20097,344,906'Structure and method for releasing stressy metal films'20087,327,774'Self-forming microlenses for VCSEL arrays'20087,324,717'Photonic device with integrated hybrid microlens array'20087,310,358'Semiconductor lasers'20077,293,996'Transmission-line spring structure'20077,284,324'Method of making photolithographically-patterned out-of-plane coil structures'20077,257,141'Phase array oxide-confined VCSELs'20077,195,939'Structure and method for electrical isolation of optoelectronic integrated circuits'20077,160,121'Stressed metal contact with enhanced lateral compliance'20077,160,749'Method and structure for eliminating polarization instability in laterally—oxidized VCSELs'20077,120,182'Densely-packed light emitters with layered semiconductor structure and methods of making the light emitters'20067,042,015'Semi-transparent power monitor integrated with a light producing module'20067,015,584'High force metal plated spring structure'20067,000,315'Method of making photolithographically-patterned out-of-plane coil structures'20066,973,722'Release height adjustment of stressy metal devices by annealing before and after release'20056,967,981'Nitride based semiconductor structures with highly reflective mirrors'20056,947,291'Photolithographically-patterned out-of-plane coil structures and method of making'20056,922,327'Photolithographically-patterned variable capacitor structures and method of making'20056,856,225'Photolithographically-patterned out-of-plane coil structures and method of making'20056,794,725'Amorphous silicon sensor with micro-spring interconnects for achieving high uniformity in integrated light-emitting sources'20046,760,505'Method of aligning mirrors in an optical cross switch'20046,706,202'Method for shaped optical MEMS components with stressed thin films'20046,674,090'Structure and method for planar lateral oxidation in active'20046,655,964'Low cost integrated out-of-plane micro-device structures and method of making'20036,646,533'Photolithographically-patterned out-of-plane coil structures and method of making'20036,621,141'Out-of-plane microcoil with ground-plane structure'20036,621,844'Buried oxide photonic device with large contact and precise aperture'20036,606,235'Photolithographically-patterned variable capacitor structures and method of making'20036,582,989'Photolithographically-patterned out-of-plane coil structures and method of making'20036,567,448'Scanning III-V compound light emitters integrated with Si-based actuators'20036,560,861'Microspring with conductive coating deposited on tip after release'20036,548,908'Structure and method for planar lateral oxidation in passive devices'20036,549,691'Optical cross switching system'20036,545,335'Structure and method for electrical isolation of optoelectronic integrated circuits'20036,534,249'Method of making low cost integrated out-of-plane micro-device structures'20036,455,340'Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff'20026,439,898'Method and apparatus for interconnecting devices using an adhesive'20026,429,417'Highly transmissive sensor for detecting the position of an optical signal'20026,396,677'Photolithographically-patterned variable capacitor structures and method of making'20026,392,524'Photolithographically-patterned out-of-plane coil structures and method of making'20026,372,356'Compliant substrates for growing lattice mismatched films'20026,355,497'Removable large area, low defect density films for led and laser diode growth'20026,304,588'Method and structure for eliminating polarization instability in laterally-oxidized VCSELs'20016,213,789'Method and apparatus for interconnecting devices using an adhesive'20016,107,641'Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage'20006,054,335'Fabrication of scanning III-V compound light emitters integrated with Si-based actuators'20006,019,796'Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage'20006,020,223'Method of manufacturing a thin film transistor with reduced parasitic capacitance and reduced feed-through voltage'20005,944,537'Photolithographically patterned spring contact and apparatus and methods for electrically contacting devices'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2009Patents assigned to XEROX CORP (39)· patent assignee history
1999–2003Based in Mountain View, CA, US· patent location history
2001–2021Based in San Jose, CA, US· patent location history
2003–2021Patents assigned to PALO ALTO RES CT INC (94)· patent assignee history
2012–2016Patents assigned to CHUA CHRISTOPHER L (22)· patent assignee history
2012–2016Patents assigned to JOHNSON NOBLE M (11)· patent assignee history
2012–2016Patents assigned to YANG ZHIHONG (11)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| PALO ALTO RES CT INC | 94 | 2003–2021 |
| XEROX CORP | 39 | 1999–2009 |
| CHUA CHRISTOPHER Lself | 22 | 2012–2016 |
| JOHNSON NOBLE M | 11 | 2012–2016 |
| YANG ZHIHONG | 11 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| San Jose, California, US | 129 | 2001–2021 |
| Mountain View, California, US | 6 | 1999–2003 |