Inventor

Michael Ettenberg

Inventor

Freehold, NJ, US

Overview

25→

Patents

1976–1991

Patent span

Electricity

Primary field (CPC H)

Patents· 25 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary

H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light21%

H10HInorganic light-emitting semiconductor devices having potential barriers19%

H04BTransmission10%

G02BOptical elements, systems or apparatus7%

G11BInformation storage based on relative movement between record carrier and transducer7%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation7%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution7%

H01JElectric discharge tubes or discharge lamps5%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%

C30BSingle-crystal growth2%

PatentTitleYear

5,019,787'Optical amplifier'1991 4,911,516'Optical device with mode selecting grating'1990 4,903,275'Phase modulation semiconductor laser array'1990 4,691,320'Semiconductor structure and devices'1987 4,597,004'Photodetector'1986 4,547,876'Optical recording medium and information record and method of making same'1985 4,416,012'W-Guide buried heterostructure laser'1983 4,383,311'Optical recording medium and information record with indented overcoat'1983 4,300,811'III-V Direct-bandgap semiconductor optical filter'1981 4,241,423'Optical memory with injection laser as light source and detector'1980 4,233,614'Light emitting diode'1980 4,228,349'III-V Direct-bandgap semiconductor optical filter'1980 4,195,269'Two-way single fiber optical communication system'1980 4,179,308'Low cost high efficiency gallium arsenide homojunction solar cell incorporating a layer of indium gallium phosphide'1979 4,178,564'Half wave protection layers on injection lasers'1979 4,092,659'Multi-layer reflector for electroluminescent device'1978 4,052,252'Liquid phase epitaxial growth with interfacial temperature difference'1977 4,048,627'Electroluminescent semiconductor device having a restricted current flow'1977 4,023,062'Low beam divergence light emitting diode'1977 4,019,082'Electron emitting device and method of making the same'1977 3,991,339'Light emitting diode with reflector'1976 3,990,101'Solar cell device having two heterojunctions'1976 3,974,514'Electroluminescent edge-emitting diode comprising a light reflector in a groove'1976 3,963,536'Method of making electroluminescent semiconductor devices'1976 3,960,620'Method of making a transmission mode semiconductor photocathode'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–1987Patents assigned to RCA CORP (22)· patent assignee history

1976–1990Based in Freehold, NJ, US· patent location history

1990Patents assigned to GEN ELECTRIC (2)· patent assignee history

1991Patents assigned to SARNOFF DAVID RES CENTER (1)· patent assignee history

1991Based in West Windsor, NJ, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
RCA CORP	22	1976–1987
GEN ELECTRIC	2	1990
SARNOFF DAVID RES CENTER	1	1991

Locations

Location	Patents	Span
Freehold, New Jersey, US	24	1976–1990
West Windsor, New Jersey, US	1	1991