Inventor

Tian-An Chen

Inventor
Phoenix, AZ, US

Overview

36→
Patents
2000–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 36 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1023%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
Y10TTechnical subjects covered by former us classification11%
H05KPrinted circuits10%
C08GMacromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds7%
C08LCompositions of macromolecular compounds6%
C08JWorking-up5%
B23KSoldering or unsoldering3%
H01BCables3%
B29CShaping or joining of plastics2%
PatentTitleYear
11,081,500Semiconductor structure and method of forming the same202111,069,714Boundary scheme for semiconductor integrated circuit and method for forming an integrated circuit20218,513,111'Forming semiconductor structures'20138,431,223'Low coefficient of thermal expansion (CTE) thermosetting resins for integrated circuit applications'20138,242,216'Low coefficient of thermal expansion (CTE) thermosetting resins for integrated circuit applications'20127,999,042'Low coefficient of thermal expansion (CTE) thermosetting resins for integrated circuit applications'20117,718,216'Low temperature bumping process'20107,619,318'No-flow underfill composition and method'20097,521,115'Low temperature bumping process'20097,504,318'Nanopowder coating for scribing and structures formed thereby'20097,470,564'Flip-chip system and method of making same'20087,303,944'Microelectronic devices having underfill materials with improved fluxing agents'20077,279,359'High performance amine based no-flow underfill materials for flip chip applications'20077,218,007'Underfill material to reduce ball limiting metallurgy delamination and cracking potential in semiconductor devices'20077,179,684'Microelectronic or optoelectronic package having a polybenzoxazine-based film as an underfill material'20077,153,765'Method of assembling soldered packages utilizing selective solder deposition by self-assembly of nano-sized solder particles'20067,029,723'Forming chemical vapor depositable low dielectric constant layers'20067,026,376'Fluxing agent for underfill materials'20066,982,492'No-flow underfill composition and method'20066,899,960'Microelectronic or optoelectronic package having a polybenzoxazine-based film as an underfill material'20056,872,654'Method of fabricating a bismaleimide (BMI) ASA sacrifical material for an integrated circuit air gap dielectric'20056,794,225'Surface treatment for microelectronic device substrate'20046,794,761'No-flow underfill material'20046,780,517'Polycarbosilane adhesion promoters for low dielectric constant polymeric materials'20046,761,975'Polycarbosilane adhesion promoters for low dielectric constant polymeric materials'20046,730,542'Polybenzoxazine based wafer-level underfill material'20046,727,594'Polybenzoxazine based wafer-level underfill material'20046,610,114'Oxidizing polishing slurries for low dielectric constant materials'20036,380,347'Nanoporous polymers comprising macrocycles'20026,313,185'Polymers having backbones with reactive groups employed in crosslinking as precursors to nanoporous thin film structures'20016,303,733'Poly(arylene ether) homopolymer compositions and methods of manufacture thereof'20016,291,628'Solvent systems for low dielectric constant polymeric materials'20016,270,395'Oxidizing polishing slurries for low dielectric constant materials'20016,172,128'Nanoporous polymers crosslinked via cyclic structures'20016,156,812'Nanoporous material fabricated using polymeric template strands'20006,124,421'Poly(arylene ether) compositions and methods of manufacture thereof'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2004Patents assigned to HONEYWELL INT INC (7)· patent assignee history
2000–2001Patents assigned to ALLIED SIGNAL INC (4)· patent assignee history
2000–2004Based in Duluth, GA, US· patent location history
2003Based in San Jose, CA, US· patent location history
2004–2013Patents assigned to INTEL CORP (23)· patent assignee history
2004–2013Based in Phoenix, AZ, US· patent location history
2004Based in Chandler, AZ, US· patent location history
2012–2013Patents assigned to CHEN TIAN-AN (3)· patent assignee history
2012–2013Patents assigned to MATAYABAS JR JAMES C (2)· patent assignee history
2021Based in Taichung, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INTEL CORP232004–2013
HONEYWELL INT INC72000–2004
ALLIED SIGNAL INC42000–2001
CHEN TIAN-ANself32012–2013
MATAYABAS JR JAMES C22012–2013
Locations
LocationPatentsSpan
Phoenix, AZ, US222004–2013
Duluth, Georgia, US92000–2004
Taichung, TW22021
Chandler, AZ, US12004
San Jose, California, US12003