Inventor
Gyu-Chul Yi
Inventor
Pohang-si, KR
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers17%
B82YSpecific uses or applications of nanostructures10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
A61BDiagnosis7%
A61CDentistry7%
A61GTransport, personal conveyances, or accommodation specially adapted for patients or disabled persons7%
A61LMethods or apparatus for sterilising materials or objects in general7%
H01LSemiconductor devices6%
H10DInorganic electric semiconductor devices6%
B82BNanostructures formed by manipulation of individual atoms, molecules, or limited collections of atoms or molecules as discrete units4%
PatentTitleYear
9,853,106Nano-structure assembly and nano-device comprising same20179,343,624'Light emitting device and method of manufacturing the same'20168,912,556'Light emitting device and method of manufacturing the same'20148,878,231'Light emission device and manufacturing method thereof'20148,664,641'Nano device integrated on graphene and monocrystalline graphite'20148,643,035'Light emitting device and method of manufacturing the same'20148,598,607'Light emitting device and method of manufacturing the same'20138,357,922'Nanodevice, transistor comprising the nanodevice, method for manufacturing the nanodevice, and method for manufacturing the transistor'20138,242,676'Field emission device, field emission display device and methods for manufacturing the same'20128,022,432'Light-emitting device comprising conductive nanorods as transparent electrodes'20118,003,192'Nanodevice comprising a nanorod and method for manufacturing the same'20117,714,337'Light emitting device and method of manufacturing the same'20107,541,623'P-n heterojunction structure of zinc oxide-based nanorod and semiconductor thin film, preparation thereof, and nano-device comprising same'20097,388,201'Radiation detector having coated nanostructure and method'20087,102,173'Nitride semiconductor device and method of manufacturing the same'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2013Based in Pohang-si, KR· patent location history
2010–2016Patents assigned to LG ELECTRONICS INC (5)· patent assignee history
2010–2016Patents assigned to LG INNOTEK CO LTD (5)· patent assignee history
2010–2016Based in Gyeongsangbuk-do, KR· patent location history
2011–2013Patents assigned to LG DISPLAY CO LTD (4)· patent assignee history
2012–2014Patents assigned to YI GYU-CHUL (4)· patent assignee history
2012–2017Based in Seoul, KR· patent location history
2014–2017Patents assigned to SNU R&DB FOUNDATION (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| LG ELECTRONICS INC | 5 | 2010–2016 |
| LG INNOTEK CO LTD | 5 | 2010–2016 |
| LG DISPLAY CO LTD | 4 | 2011–2013 |
| YI GYU-CHULself | 4 | 2012–2014 |
| SNU R&DB FOUNDATION | 3 | 2014–2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Pohang-si, KR | 6 | 2006–2013 |
| Gyeongsangbuk-do, KR | 5 | 2010–2016 |
| Seoul, KR | 4 | 2012–2017 |