Inventor
Peter Dreier
Inventor
Tittmoning, DE
Overview
Patents· 2 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth25%
H01LSemiconductor devices25%
H10DInorganic electric semiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
PatentTitleYear
10,192,739Layered semiconductor substrate with reduced bow having a group III nitride layer and method for manufacturing it20195,089,082'Process and apparatus for producing silicon ingots having high oxygen content by crucible-free zone pulling, silicon ingots obtainable thereby and silicon wafers produced therefrom'1992Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1992Based in Burghausen, DE· patent location history
2019Patents assigned to DREIER PETER (1)· patent assignee history
2019Patents assigned to MAYRHUBER RUDOLF (1)· patent assignee history
2019Patents assigned to MUEMMLER FRANK (1)· patent assignee history
2019Patents assigned to ROTHAMMER UTE (1)· patent assignee history
2019Patents assigned to SACHS GUENTER (1)· patent assignee history
2019Based in Tittmoning, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| DREIER PETERself | 1 | 2019 |
| MAYRHUBER RUDOLF | 1 | 2019 |
| MUEMMLER FRANK | 1 | 2019 |
| ROTHAMMER UTE | 1 | 2019 |
| SACHS GUENTER | 1 | 2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tittmoning, DE | 1 | 2019 |
| Burghausen, DE | 1 | 1992 |