Inventor

Pankaj B. Shah

Inventor
Silver Spring, MD, US

Overview

18→
Patents
1991–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 18 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices38%
H01LSemiconductor devices12%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
G06FElectric digital data processing6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
A47LDomestic washing or cleaning3%
B25JManipulators3%
G01SRadio direction-finding3%
G05BControl or regulating systems in general3%
G05DSystems for controlling or regulating non-electric variables3%
PatentTitleYear
9,960,249Semiconductor heterobarrier electron device and method of making20189,893,155'Semiconductor electronic device formed of 2-D van der Waals material whose free charge carrier concentration is determined by adjacent semiconductor\'s polarization'20189,166,068'Semiconductor heterobarrier electron device and method of making'20159,117,937'Group III nitride semiconductor frequency multiplier'20158,996,172'Distance sensor system and method'20158,796,082'Method of optimizing a GA—nitride device material structure for a frequency multiplication device'20148,314,016'Low-defect density gallium nitride semiconductor structures and fabrication methods'20127,851,274'Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor'20107,555,363'Multi-function robotic device'20097,304,363'Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device'20076,960,526'Method of fabricating sub-100 nanometer field emitter tips comprising group III-nitride semiconductors'20056,900,477'Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture'20056,734,462'Silicon carbide power devices having increased voltage blocking capabilities'20046,703,642'Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state'20046,501,099'Modified-anode gate turn-off thyristor'20026,472,686'Silicon carbide (SIC) gate turn-off (GTO) thyristor apparatus and method for high power control'20026,128,324'High speed, spatially switching light'20005,058,162'Method of distributing computer data files'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991Based in Santa Clara, CA, US· patent location history
2000–2018Patents assigned to US ARMY (15)· patent assignee history
2000–2005Based in Silver Spring, MD, US· patent location history
2007–2018Based in Rockville, MD, US· patent location history
2009–2015Patents assigned to NEATO ROBOTICS INC (2)· patent assignee history
2009–2015Based in San Jose, CA, US· patent location history
2012–2015Patents assigned to SHAH PANKAJ B (2)· patent assignee history
2014–2015Based in Adelphi, MD, US· patent location history
2015–2018Patents assigned to US ARMY RES LAB (2)· patent assignee history
2015Patents assigned to AUGENBRAUN JOE (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
US ARMY152000–2018
NEATO ROBOTICS INC22009–2015
SHAH PANKAJ Bself22012–2015
US ARMY RES LAB22015–2018
AUGENBRAUN JOE12015
Locations
LocationPatentsSpan
Silver Spring, Maryland, US72000–2005
Rockville, Maryland, US62007–2018
Adelphi, Maryland, US22014–2015
San Jose, California, US22009–2015
Santa Clara, California, US11991