Inventor
Ming-shuan LI
Inventor
TW
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H01LSemiconductor devices25%
B82YSpecific uses or applications of nanostructures18%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
H10BElectronic memory devices4%
G01KMeasuring temperature1%
PatentTitleYear
12,557,396Device having nanostructure electrostatic discharge structure and method202612,527,039Semiconductor devices with enhanced carrier mobility202612,336,246Semiconductor structures with a hybrid substrate202512,324,210Bipolar junction transistor with gate over terminals202512,317,602Forming ESD devices using multi-gate compatible processes202512,302,604Multi-gate device and related methods202512,230,634Semiconductor devices and methods of fabricating the same202512,213,297Semiconductor devices with threshold voltage modulation layer202512,166,071Dielectric fins with air gap and backside self-aligned contact202412,154,946Semiconductor device structure202412,078,551Complementary bipolar junction transistor202412,051,729Bipolar junction transistor with gate over terminals202412,040,405Multi-gate device and related methods202411,948,936Forming ESD devices using multi-gate compatible processess202411,843,038Bipolar junction transistor with gate over terminals202311,837,459Method and structure for diodes with backside contacts202311,830,938Bipolar junction device202311,688,767Semiconductor device structure and method for forming the same202311,637,099Forming ESD devices using multi-gate compatible processes202311,600,695Dielectric fins with air gap and backside self-aligned contact202311,600,719Bipolar junction device202311,289,591Bipolar junction device202211,239,330Bipolar junction transistor with gate over terminals2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (23)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 23 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 23 | 2022–2026 |