Inventor
Keijiro Uehara
Inventor
Sagamihara, JP
Overview
Patents· 8 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices32%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests16%
G11CStatic stores11%
PatentTitleYear
6,342,710'Semiconductor integrated circuit'20026,121,646'Semiconductor integrated circuit'20005,391,501'Method for manufacturing integrated circuits with a step for replacing defective circuit elements'19954,675,983'Method of making a semiconductor including forming graft/extrinsic and intrinsic base regions'19874,640,721'Method of forming bipolar transistors with graft base regions'19874,362,599'Method for making semiconductor device'19824,278,987'Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations'19813,977,920'Method of fabricating semiconductor device using at least two sorts of insulating films different from each other'1976Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1976–2002Patents assigned to HITACHI LTD (8)· patent assignee history
1976–1982Based in Tokyo, JP· patent location history
1987–2002Based in Sagamihara, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI LTD | 8 | 1976–2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| Sagamihara, JP | 5 | 1987–2002 |
| Tokyo, JP | 3 | 1976–1982 |