Inventor
Hiroshi Shinriki
Inventor
Chiba, JP
Overview
Patents· 48 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
C23CCoating metallic material24%
H10DInorganic electric semiconductor devices15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
H10BElectronic memory devices6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
H01JElectric discharge tubes or discharge lamps3%
B08BCleaning in general2%
G11CStatic stores2%
C30BSingle-crystal growth1%
PatentTitleYear
8,133,555'Method for forming metal film by ALD using beta-diketone metal complex'20128,084,104'Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition'20117,799,674'Ruthenium alloy film for copper interconnects'20107,785,658'Method for forming metal wiring structure'20107,655,564'Method for forming Ta-Ru liner layer for Cu wiring'20107,497,964'Plasma igniting method and substrate processing method'20097,481,902'Substrate processing apparatus and method, high speed rotary valve and cleaning method'20097,435,484'Ruthenium thin film-formed structure'20087,408,225'Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms'20087,383,841'Method of cleaning substrate-processing device and substrate-processing device'20087,378,358'Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus'20087,354,622'Method for forming thin film and apparatus for forming thin film'20087,273,526'Thin-film deposition apparatus'20077,129,185'Substrate processing method and a computer readable storage medium storing a program for controlling same'20067,125,799'Method and device for processing substrate, and apparatus for manufacturing semiconductor device'20067,105,101'Method of removing oxide film on a substrate with hydrogen and fluorine radicals'20067,105,362'Method of forming dielectric film'20067,037,560'Film forming method, and film modifying method'20066,953,731'Fabrication process of a semiconductor device'20056,927,112'Radical processing of a sub-nanometer insulation film'20056,866,890'Method of forming a dielectric film'20056,866,882'Method of forming a thin film'20056,806,211'Device and method for processing substrate'20046,800,139'Film deposition apparatus and method'20046,756,235'Metal oxide film formation method and apparatus'20046,485,564'Thin film forming method'20026,482,266'Metal organic chemical vapor deposition method and apparatus'20026,467,491'Processing apparatus and processing method'20026,428,850'Single-substrate-processing CVD method of forming film containing metal element'20026,232,248'Single-substrate-heat-processing method for performing reformation and crystallization'20016,143,081'Film forming apparatus and method, and film modifying apparatus and method'20006,126,753'Single-substrate-processing CVD apparatus and method'20006,063,703'Method for making metal interconnection'20006,001,729'Method of forming wiring structure for semiconductor device'19995,973,402'Metal interconnection and method for making'19995,834,846'Semiconductor device with contact structure and method of manufacturing the same'19985,679,974'Antifuse element and semiconductor device having antifuse elements'19975,652,180'Method of manufacturing semiconductor device with contact structure'19975,641,985'Antifuse element and semiconductor device having antifuse elements'19975,627,102'Method for making metal interconnection with chlorine plasma etch'19975,565,702'Antifuse element, semiconductor device having antifuse elements, and method for manufacturing the same'19965,521,423'Dielectric structure for anti-fuse programming element'19965,336,638'Process for manufacturing semiconductor devices'19945,292,673'Method of manufacturing a semiconductor device'19945,079,191'Process for producing a semiconductor device'19924,937,650'Semiconductor capacitor device with dual dielectric'19904,891,684'Semiconductor device'19904,809,052'Semiconductor memory device'1989Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1989–1994Patents assigned to HITACHI LTD (6)· patent assignee history
1989–2008Based in Tokyo, JP· patent location history
1996–2000Patents assigned to KAWASAKI STEEL CO (10)· patent assignee history
1996–2006Based in Chiba, JP· patent location history
1996–2011Based in Matsudo, JP· patent location history
2000–2009Patents assigned to TOKYO ELECTRON LTD (23)· patent assignee history
2004–2008Based in Nirasaki, JP· patent location history
2007–2012Patents assigned to ASM JAPAN (8)· patent assignee history
2007–2012Based in Tama, JP· patent location history
2011–2012Patents assigned to JEONG DAEKYUN (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO ELECTRON LTD | 23 | 2000–2009 |
| KAWASAKI STEEL CO | 10 | 1996–2000 |
| ASM JAPAN | 8 | 2007–2012 |
| HITACHI LTD | 6 | 1989–1994 |
| JEONG DAEKYUN | 2 | 2011–2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Chiba, JP | 14 | 1996–2006 |
| Matsudo, JP | 8 | 1996–2011 |
| Nirasaki, JP | 8 | 2004–2008 |
| Tama, JP | 7 | 2007–2012 |
| Tokyo, JP | 7 | 1989–2008 |