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Inventor

Hidekazu Sato

Inventor
Tokyo, JP

Overview

35→
Patents
1987–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 35 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H01FMagnets12%
Y10TTechnical subjects covered by former us classification6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
B60RVehicles, vehicle fittings, or vehicle parts, not otherwise provided for4%
C03CChemical composition of glasses, glazes or vitreous enamels4%
H01GCapacitors4%
H01LSemiconductor devices4%
C03BManufacture, shaping, or supplementary processes3%
PatentTitleYear
11,077,985Mounting base member, mounting base, and mounting method202110,808,959Air conditioning system202010,781,132Glass ceramics sintered body and coil electronic component202010,614,946Electronic component202010,607,756Soft magnetic metal powder, soft magnetic metal fired body, and coil type electronic device202010,541,078Electronic component202010,502,449Air conditioner using heat exchange water and air conditioning system including the same20199,905,365'Composite electronic device'20189,573,837'Glass ceramic composition and coil electronic component'20179,578,688'Heat treatment apparatus and heat treatment method'20179,425,074'Heat treatment apparatus'20169,159,467'Dielectric ceramic composition, electronic element, and composite electric element'20158,809,919'Semiconductor device with inverted trapezoidal cross sectional profile in surface areas of substrate'20148,592,951'Semiconductor wafer having W-shaped dummy metal filling section within monitor region'20138,209,849'Method for producing multilayer inductor'20128,163,572'Method for evaluating impurity distribution under gate electrode without damaging silicon substrate'20128,114,764'Semiconductor device and fabrication method thereof'20127,915,125'Semiconductor device and method of manufacturing the same'20117,851,890'Semiconductor device and method for manufacturing the same'20107,691,649'Method for evaluating impurity distribution under gate electrode without damaging silicon substrate'20107,642,192'Semiconductor device and fabrication method thereof'20107,358,546'Heterobipolar transistor and method of fabricating the same'20087,262,483'Semiconductor device and method for manufacturing the same'20077,194,507'Method and apparatus for setting communication parameter in information terminal'20077,119,382'Heterobipolar transistor and method of fabricating the same'20067,113,389'Surface mounted electronic component'20067,106,161'Coil component'20066,903,439'Bipolar transistor'20056,806,158'Mixed crystal layer growing method and device, and semiconductor device'20046,486,077'Silicon nitride film, semiconductor device, and method for fabricating semiconductor device'20025,802,476'Cordless telephone system having base unit with speaker'19984,981,026'Steering column shaft locking device for an automotive vehicle'19914,972,695'Anti-pick cylinder lock'19904,643,009'Steering lock arrangement'19874,638,882'Keyless steering shaft lock arrangement'1987

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1987Based in Kasukabe, JP· patent location history
1990–2020Based in Tokyo, JP· patent location history
2002–2008Patents assigned to FUJITSU LTD (6)· patent assignee history
2004–2014Based in Kawasaki, JP· patent location history
2006–2020Patents assigned to TDK CORP (10)· patent assignee history
2010–2014Patents assigned to FUJITSU SEMICONDUCTOR LTD (6)· patent assignee history
2012–2014Patents assigned to SATO HIDEKAZU (5)· patent assignee history
2012–2014Patents assigned to HASHIMI KAZUO (4)· patent assignee history
2016–2017Based in Oshu, JP· patent location history
2019–2020Based in Osaka, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TDK CORP102006–2020
FUJITSU LTD62002–2008
FUJITSU SEMICONDUCTOR LTD62010–2014
SATO HIDEKAZUself52012–2014
HASHIMI KAZUO42012–2014
Locations
LocationPatentsSpan
Tokyo, JP121990–2020
Kawasaki, JP122004–2014
Osaka, JP22019–2020
Oshu, JP22016–2017
Kasukabe, JP21987