LexDanaLexDanabeta
Inventor

Kochan Ju

Inventor
Fremont, CA, US

Overview

141→
Patents
1982–2021
Patent span
Physics
Primary field (CPC G)

Patents· 141 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Bprimary
G11BInformation storage based on relative movement between record carrier and transducer29%
B82YSpecific uses or applications of nanostructures18%
Y10TTechnical subjects covered by former us classification17%
G01RMeasuring electric variables11%
H01FMagnets8%
H10NElectric solid-state devices not otherwise provided for4%
G11CStatic stores3%
H05KPrinted circuits1%
C23FNon-mechanical removal of metallic material from surface1%
H10BElectronic memory devices1%
PatentTitleYear
11,059,954Composition for preparing transparent polymer film, transparent polymer film, and electronic device including same20219,337,415'Perpendicular spin transfer torque (STT) memory cell with double MgO interface and CoFeB layer for enhancement of perpendicular magnetic anisotropy'20169,202,482'Magnetic sensor having an extended pinned layer with stitched antiferromagnetic pinning layer'20159,001,473'TMR/CPP reader for narrow reader gap application'20158,941,954'Magnetic sensor with extended pinned layer and partial wrap around shield'20158,842,395'Magnetic sensor having an extended pinned layer and shape enhanced bias structure'20148,780,507'Read transducer and magnetic storage system implementing same'20148,325,450'Low resistance tunnel magnetoresistance (TMR) structure'20127,864,490'CPP head with parasitic shunting reduction'20117,675,718'Narrow track CPP head with bias cancellation'20107,506,430'Process to manufacture narrow track CPP head with bias cancellation'20097,477,491'GMR device having an improved free layer'20097,453,720'Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing'20087,420,780'Thin laminated single pole perpendicular write head'20087,400,475'Patterned, synthetic longitudinally exchange biased GMR sensor'20087,289,295'Return pole field reduction for perpendicular write head'20077,285,836'Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing'20077,279,269'CPP head with parasitic shunting reduction'20077,265,947'Stitching of AFM and channeling layers for in-stack biasing CPP'20077,262,941'FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures'20077,201,947'CPP and MTJ reader design with continuous exchange-coupled free layer'20077,184,248'Synthetic pattern exchange configuration for side reading reduction'20077,180,716'Fabrication method for an in-stack stabilized synthetic stitched CPP GMR head'20077,180,712'Shield structure design to improve the stability of an MR head'20077,173,848'Magnetic random access memory with memory cell stacks having more than two magnetic states'20077,162,791'Method of manufacturing integrated spin valve head'20077,152,304'Method for fabricating a patterned, synthetic transverse exchange biased GMR sensor'20067,134,186'Method for fabricating a patterned, synthetic transversely exchanged biased GMR sensor'20067,134,184'Process of manufacturing a narrow track CCP head with bias cancellation'20067,130,168'Synthetic free layer for CPP GMR'20067,118,680'Self-alignment scheme for enhancement of CPP-GMR'20067,111,386'Lead plating method for GMR head manufacture'20067,106,558'Biased spin valve head with canted adjacent layer and current channeling layer'20067,106,554'Perpendicular magnetic writer with magnetic potential control shield'20067,089,650'Method of manufacturing integrated spin valve head'20067,074,456'Process for manufacturing a bottom spin valve structure'20067,075,758'Supplementary shield for CPP GMR read head'20067,075,818'Magnetic random access memory with stacked memory layers having access lines for writing and reading'20067,072,151'Magnetic assist read track-width definition for a lead overlay top spin-valve GMR head'20067,068,478'CPP GMR read head'20067,064,924'Thin laminated single pole perpendicular write head'20067,060,321'Process for manufacturing a top spin valve'20067,061,037'Magnetic random access memory with multiple memory layers and improved memory cell selectivity'20067,040,005'Process of making a GMR improvement in CPP spin valve head by inserting a current channeling layer (CCL)'20067,042,682'Fully shielded perpendicular recoding writer'20067,016,168'Method of increasing CPP GMR in a spin valve structure'20067,010,848'Synthetic pattern exchange configuration for side reading reduction'20067,012,789'Composite shared pole design for magnetoresistive merged heads'20067,006,337'Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads'20066,999,286'Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads'20066,998,150'Method of adjusting CoFe free layer magnetostriction'20066,995,959'Integrated spin valve head'20066,992,910'Magnetic random access memory with three or more stacked toggle memory cells and method for writing a selected cell'20066,987,651'Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads'20066,987,650'Device with thermoelectric cooling'20066,985,337'Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane GMR heads'20066,983,531'Spin valve head having lead overlay'20066,973,712'Lead plating method for GMR head manufacture'20056,972,934'Synthetic anti-parallel spin valve with thin AFM layer for very high density application'20056,953,601'Synthetic free layer for CPP GMR'20056,943,994'Design of canted synthetic pattern exchange spin valve head for improving stability and bias'20056,937,497'Magnetic random access memory with stacked toggle memory cells'20056,909,583'FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin valve structures'20056,903,904'CPP GMR synthetic spin valve enhancement'20056,888,703'Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads'20056,885,527'Process to manufacture a top spin valve'20056,882,509'GMR configuration with enhanced spin filtering'20056,873,501'CPP spin valve head with bias point control'20056,857,180'Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor'20056,821,717'Process to form narrow write track for magnetic recording'20046,816,346'Ferromagnetic/antiferromagnetic bilayer, including decoupler, for longitudinal bias'20046,798,622'Magnetoresistive (MR) sensor element with sunken lead structure'20046,775,903'Method for fabricating a top magnetoresistive sensor element having a synthetic pinned layer'20046,776,883'Process of manufacturing a magnetic read head'20046,773,515'FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures'20046,770,382'GMR configuration with enhanced spin filtering'20046,767,477'Etching process to selectively remove copper plating seed layer'20046,759,084'Process to form NOL structure for CPP GMR'20046,729,014'Magnetic assist read track-width definition for a lead overlay top spin-valve GMR head'20046,721,143'Ferromagnetic/antiferromagnetic bilayer, including decoupler, for longitudinal bias'20046,683,762'CPP GMR device with inverse GMR material'20046,665,154'Spin valve head with a current channeling layer'20036,634,087'Spin valve head having lead overlay'20036,630,248'Synthetic anti-parallel/parallel/pinned layer spin valve'20036,627,390'Masking frame plating method for forming masking frame plated layer'20036,620,530'Synthetic anti-parallel spin valve, having improved robustness, and process to manufacture it'20036,596,468'Process to form a flux concentration stitched write head'20036,594,124'Canted adjacent layer stabilized SV heads'20036,590,751'Anisotropic magnetoresistive (MR) sensor element with enhanced magnetoresistive (MR) coefficient'20036,581,272'Method for forming a bottom spin valve magnetoresistive sensor element'20036,560,864'Process for manufacturing a flat coil'20036,524,491'Double plate-up process for fabrication of composite magnetoresistive shared poles'20036,449,131'Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof'20026,447,689'Protective layer for continuous GMR design using reverse photo mask'20026,428,714'Protective layer for continuous GMR design'20026,428,719'Etching process to selectively remove copper plating seed layer'20026,430,015'Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration'20026,393,692'Method of manufacture of a composite shared pole design for magnetoresistive merged heads'20026,396,671'Ruthenium bias compensation layer for spin valve head and process of manufacturing'20026,395,458'Corrosion inhibitor of NiCu for high performance writers'20026,392,853'Spin valve structure design with laminated free layer'20026,387,599'Corrosion inhibitor of NiCu for high performance writers'20026,373,667'Single stripe magnetoresistive (MR) head'20026,345,435'Method to make laminated yoke for high data rate giant magneto-resistive head'20026,322,640'Multiple thermal annealing method for forming antiferromagnetic exchange biased magnetoresistive (MR) sensor element'20016,310,751'Anti-parallel longitudinal patterned exchange biased dual stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof'20016,291,087'Magnetoresistive (MR) sensor element with enhanced resistivity sensitivity and enhanced magnetic exchange bias'20016,292,336'Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient'20016,291,138'Masking frame plating method for forming masking frame plated layer'20016,287,476'Electrochemical method to improve MR reader edge definition and device reliability'20016,274,025'Chemical approach to develop lift-off photoresist structure and passivate MR sensor'20016,239,948'Non-magnetic nickel containing conductor alloys for magnetic transducer element fabrication'20016,230,390'Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof'20016,228,276'Method of manufacturing magnetoresistive (MR) sensor element with sunken lead structure'20016,218,080'Plated flat metal gap for very narrow recording heads'20016,207,350'Corrosion inhibitor for NiCu for high performance writers'20016,204,071'Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration'20016,103,136'Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL)'20006,091,589'Soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL)'20006,007,731'Soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL)'19995,985,162'Method for forming soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL)'19995,920,980'Method of making a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL)'19995,843,521'Photoresist frame plated magnetic transducer pole layer employing high magnetic permeability seed layer'19985,802,700'Method of making a planarized thin film magnetic write head with submicron trackwidth'19985,719,730'Low fringe-field and narrow write-track magneto-resistive (MR) magnetic read-write head'19985,703,485'Method and test structure for determining magnetic domain switching field when fabricating patterned exchange biased magnetoresistive (MR) head'19975,684,658'High track density dual stripe magnetoresistive (DSMR) head'19975,652,687'Planarized thin film magnetic write head with submicron trackwidth'19975,488,528'Pole tip structure for thin film magnetic heads'19965,452,165'Close packed magnetic head linear array'19955,393,376'Method of making pole tip structure for thin film magnetic heads'19955,375,023'Submicron thin film inductive head with self-aligned staggered pole-tips'19945,285,339'Magnetoresistive read transducer having improved bias profile'19945,285,340'Thin film magnetic head with conformable pole tips'19945,282,308'Thin film planarization process for fabricating magnetic heads employing a stitched pole structure'19945,079,663'Magnetoresistive sensor with track following capability'19924,414,649'Gap tolerant merge element for contiguous-disk bubble devices'19834,394,746'Swap gate for ion-implanted contiguous-disk bubble devices'19834,386,418'Conductorless swap gate for ion-implanted contiguous-disk bubble devices'19834,346,457'Dovetail propagation structure for contiguous disk bubble devices'19824,342,098'Asymmetric sawtooth contiguous disk propagation pattern'1982

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1982–1998Patents assigned to IBM (15)· patent assignee history
1982–2000Based in San Jose, CA, US· patent location history
1997–2011Patents assigned to HEADWAY TECHNOLOGIES INC (109)· patent assignee history
1998–2008Based in Fremont, CA, US· patent location history
2004–2015Based in Monte Sereno, CA, US· patent location history
2005–2008Patents assigned to MAGLABS INC (6)· patent assignee history
2012–2014Patents assigned to HONG YING (2)· patent assignee history
2014–2016Patents assigned to HGST Netherlands BV (6)· patent assignee history
2016Based in Los Gatos, CA, US· patent location history
2021Based in Suwon-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HEADWAY TECHNOLOGIES INC1091997–2011
IBM151982–1998
HGST Netherlands BV62014–2016
MAGLABS INC62005–2008
HONG YING22012–2014
Locations
LocationPatentsSpan
Fremont, California, US821998–2008
Monte Sereno, California, US352004–2015
San Jose, California, US211982–2000
Suwon-si, KR12021
Los Gatos, California, US12016