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Inventor

Ryo Nakabayashi

Inventor
Niigata, JP

Overview

20→
Patents
2008–2019
Patent span
Physics
Primary field (CPC G)

Patents· 20 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B82Yprimary
B82YSpecific uses or applications of nanostructures20%
G01RMeasuring electric variables19%
G11BInformation storage based on relative movement between record carrier and transducer19%
H01FMagnets17%
H10NElectric solid-state devices not otherwise provided for17%
Y10TTechnical subjects covered by former us classification5%
G11CStatic stores4%
PatentTitleYear
10,283,266Powder core, manufacturing method of powder core, inductor including powder core, and electronic/electric device having inductor mounted therein20198,208,231'Tunneling magnetic sensing element with insertion magnetic layer inspired into soft magnetic layer'20128,124,253'Tunneling magnetic sensing element including MGO film as insulating barrier layer'20128,054,588'Tunneling magnetoresistive element including multilayer free magnetic layer having inserted nonmagnetic metal sublayer'20118,045,300'Tunneling magnetic sensing element and method for producing same'20118,023,233'Tunneling magnetic sensing element including free magnetic layer and IrMn protective layer disposed thereon and method for manufacturing the same'20118,009,391'Magnetic sensing element and method for manufacturing the same'20117,969,690'Tunneling magnetoresistive element which includes Mg-O barrier layer and in which nonmagnetic metal sublayer is disposed in one of magnetic layers'20117,969,693'Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor'20117,961,442'Tunneling magnetic detecting element having insulation barrier layer and method for making the same'20117,933,100'Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon'20117,916,436'Tunneling magnetic sensor including platinum layer and method for producing the same'20117,907,370'Tunneling magnetic sensing element having free layer containing CoFe alloy'20117,898,776'Tunneling magnetic sensing element including enhancing layer having high Fe concentration in the vicinity of barrier layer'20117,881,024'Tunnel-type magnetic detecting element and method of manufacturing the same'20117,787,221'Tunneling magnetic sensing element including non-magnetic metal layer between magnetic layers'20107,760,473'Magnetoresistance element employing Heusler alloy as magnetic layer'20107,643,254'Tunnel-effect type magnetic sensor having free layer including non-magnetic metal layer'20107,567,412'Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same'20097,397,639'Magnetic detecting element provided with free layer having layered-ferri configuration'2008

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2008–2011Patents assigned to TDK CORP (9)· patent assignee history
2008–2010Based in Niigaka-ken, JP· patent location history
2009–2019Patents assigned to ALPS ELECTRIC CO LTD (11)· patent assignee history
2010–2019Based in Niigata, JP· patent location history
2011Based in Tokyo, JP· patent location history
2012Patents assigned to HASEGAWA NAOYA (2)· patent assignee history
2012Patents assigned to IDE YOSUKE (2)· patent assignee history
2012Patents assigned to KOBAYASHI HIDEKAZU (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
ALPS ELECTRIC CO LTD112009–2019
TDK CORP92008–2011
HASEGAWA NAOYA22012
IDE YOSUKE22012
KOBAYASHI HIDEKAZU22012
Locations
LocationPatentsSpan
Niigata, JP162010–2019
Niigaka-ken, JP32008–2010
Tokyo, JP12011