Inventor
Yukio Fukuda
Inventor
Yawara-mura, JP
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10BElectronic memory devices11%
G11CStatic stores9%
C23CCoating metallic material6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
Y10TTechnical subjects covered by former us classification4%
B01DSeparation2%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry2%
C01BNon-metallic elements2%
PatentTitleYear
8,153,091'Xenon retrieval system and retrieval device'20127,717,061'Gas switching mechanism for plasma processing apparatus'20106,847,755'Optical cross connection switch using voltage-controlled interferometric optical switching elements'20056,747,203'Photovoltaic module'20046,747,353'Barrier layer for copper metallization in integrated circuit fabrication'20046,728,128'Dummy cell structure for 1T1C FeRAM cell array'20046,724,646'Dummy cell structure for 1T1C FeRAM cell array'20046,721,200'Dummy cell structure for 1T1C FeRAM cell array'20046,587,367'Dummy cell structure for 1T1C FeRAM cell array'20036,472,229'Method for manufacturing a ferroelectric capacitor having improved polarization characteristics and a method for manufacturing a ferroelectric memory device incorporating such capacitor'20026,303,952'Contact structure with an oxide silicidation barrier'20016,297,085'Method for manufacturing ferroelectric capacitor and method for manufacturing ferroelectric memory'20016,238,932'Method for fabricating reliable multilayer bottom electrode for ferroelectric capacitors'20016,150,183'Method for manufacturing metal oxide capacitor and method for manufacturing semiconductor memory device'20006,054,387'Method for forming a silicide region'20006,033,953'Method for manufacturing dielectric capacitor, dielectric memory device'20005,840,615'Method for forming a ferroelectric material film by the sol-gel method, along with a process for a production of a capacitor and its raw material solution'19985,793,600'Method for forming high dielectric capacitor electrode structure and semiconductor memory devices'19985,776,788'Method for forming a strong dielectric film by the sol-gel technique and a method for manufacturing a capacitor'19985,654,567'Capacitor, electrode or wiring structure, and semi conductor device'19975,508,953'Capacitor, electrode structure, and semiconductor memory device'1996D0360615'Small electric motor with mounting flange'1995D0359476'Circuit board with mounting flange'19954,988,979'Fault inspection system for rotary machines'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995Based in Nagano, JP· patent location history
1996–2005Patents assigned to TEXAS INSTRUMENTS INC (18)· patent assignee history
1997–2004Based in Ibaraki, JP· patent location history
1998–2002Based in Yawara-mura, JP· patent location history
2000–2005Based in Tokai, JP· patent location history
2003–2004Based in Yamanashi, JP· patent location history
2012Patents assigned to AIR LIQUIDE (1)· patent assignee history
2012Patents assigned to FUKUDA YUKIO (1)· patent assignee history
2012Patents assigned to HASHIMOTO TAIJI (1)· patent assignee history
2012Patents assigned to KIMOTO MASAHIRO (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TEXAS INSTRUMENTS INC | 18 | 1996–2005 |
| AIR LIQUIDE | 1 | 2012 |
| FUKUDA YUKIOself | 1 | 2012 |
| HASHIMOTO TAIJI | 1 | 2012 |
| KIMOTO MASAHIRO | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yawara-mura, JP | 5 | 1998–2002 |
| Ibaraki, JP | 4 | 1997–2004 |
| Yamanashi, JP | 4 | 2003–2004 |
| Tokai, JP | 3 | 2000–2005 |
| Nagano, JP | 2 | 1995 |