LexDanaLexDanabeta
Inventor

Takuji Okahisa

Inventor
Itami, JP

Overview

45→
Patents
1999–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 45 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H10HInorganic light-emitting semiconductor devices having potential barriers9%
H10DInorganic electric semiconductor devices8%
C23CCoating metallic material4%
H01LSemiconductor devices4%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
Y10TTechnical subjects covered by former us classification4%
B82YSpecific uses or applications of nanostructures3%
PatentTitleYear
10,822,693Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate202010,487,395Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate20199,153,742'GaN-crystal free-standing substrate and method for producing the same'20159,064,706'Composite of III-nitride crystal on laterally stacked substrates'20158,872,309'Composite of III-nitride crystal on laterally stacked substrates'20148,845,992'III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrate'20148,709,923'Method of manufacturing III-nitride crystal'20148,698,282'Group III nitride semiconductor crystal substrate and semiconductor device'20148,574,364'GaN-crystal free-standing substrate and method for producing the same'20138,421,190'Group III nitride semiconductor substrate and manufacturing method thereof'20138,404,569'Fabrication method and fabrication apparatus of group III nitride crystal substance'20138,404,042'Group-III nitride crystal composite'20138,258,051'Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal'20128,198,177'AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing same'20128,147,612'Method for manufacturing gallium nitride crystal and gallium nitride wafer'20128,097,528'Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device'20128,067,300'AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same'20117,943,964'AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the same'20117,858,502'Fabrication method and fabrication apparatus of group III nitride crystal substance'20107,794,543'Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate'20107,723,142'Growth method of GaN crystal, and GaN crystal substrate'20107,691,732'Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device'20107,655,960'A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same'20107,589,000'Fabrication method and fabrication apparatus of group III nitride crystal substance'20097,534,310'Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate'20097,531,889'Epitaxial substrate and semiconductor element'20097,521,339'GaN single crystal substrate and method of making the same'20097,504,323'GaN single crystal substrate and method of making the same'20097,481,881'Method of manufacturing GaN crystal substrate'20097,473,315'AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate'20097,390,359'Nitride semiconductor wafer'20087,357,837'GaN single crystal substrate and method of making the same'20087,354,477'Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate'20087,351,347'Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate, and method of manufacturing gallium nitride substrate'20087,303,630'Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate'20077,112,826'Single crystal GaN substrate semiconductor device'20067,105,865'AlxInyGa1−x−yN mixture crystal substrate'20067,087,114'Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate'20066,693,021'GaN single crystal substrate and method of making the same'20046,667,184'Single crystal GaN substrate, method of growing same and method of producing same'20036,468,882'Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate'20026,468,347'Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate'20026,413,627'GaN single crystal substrate and method of producing same'20026,031,252'Epitaxial wafer and method of preparing the same'20005,970,314'Process for vapor phase epitaxy of compound semiconductor'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2020Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (44)· patent assignee history
1999–2020Based in Itami, JP· patent location history
2000–2012Based in Hyogo, JP· patent location history
2011–2014Patents assigned to OKAHISA TAKUJI (11)· patent assignee history
2011–2014Patents assigned to NAKAHATA SEIJI (7)· patent assignee history
2012–2013Patents assigned to UEMATSU KOJI (6)· patent assignee history
2012–2013Patents assigned to NAKAHATA HIDEAKI (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO ELECTRIC INDUSTRIES441999–2020
OKAHISA TAKUJIself112011–2014
NAKAHATA SEIJI72011–2014
UEMATSU KOJI62012–2013
NAKAHATA HIDEAKI52012–2013
Locations
LocationPatentsSpan
Itami, JP331999–2020
Hyogo, JP122000–2012