Inventor
Evelyne Gridelet
Inventor
Omal, BE
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices35%
H01LSemiconductor devices29%
G01NInvestigating or analysing materials by determining their chemical or physical properties8%
Y10TTechnical subjects covered by former us classification6%
B01LChemical or physical laboratory apparatus for general use4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems2%
F04BPositive-displacement machines for liquids2%
G05FSystems for regulating electric or magnetic variables2%
H03FAmplifiers2%
PatentTitleYear
10,043,894Transistor amplifier circuit and integrated circuit201810,014,398Bipolar transistor device and method of fabrication20189,799,757'PN junction chemical sensor'20179,515,644'Semiconductor device and circuit with dynamic control of electric field'20169,431,524'Method of manufacturing IC comprising a bipolar transistor and IC'20169,375,711'Sensor and a method of assembling a sensor'20169,269,706'Method of processing a silicon wafer and a silicon integrated circuit'20169,240,468'Bipolar transistor having laterally extending collector'20169,206,794'Microfluidic pump with metal electrode having variable oxidation state'20159,177,852'Integrated circuits separated by through-wafer trench isolation'20159,111,987'Method of manufacturing a bipolar transistor, bipolar transistor and integrated circuit'20159,018,681'Method of manufacturing a bipolar transistor and bipolar transistor'20158,946,042'Bipolar transistor manufacturing method, bipolar transistor and integrated circuit'20158,901,669'Method of manufacturing an IC comprising a plurality of bipolar transistors and IC comprising a plurality of bipolar transistors'20148,871,599'Method of manufacturing IC comprising a bipolar transistor and IC'20148,872,237'Heterojunction bipolar transistor manufacturing method and integrated circuit comprising a heterojunction bipolar transistor'20148,853,816'Integrated circuits separated by through-wafer trench isolation'20148,821,794'Sensor chip and method of manufacturing the same'20148,803,156'Heterojunction biopolar transistor and manufacturing method'20148,794,054'Sensor device and a method of manufacturing the same'20148,686,424'Bipolar transistor manufacturing method, bipolar transistor and integrated circuit'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2018Patents assigned to NXP BV (21)· patent assignee history
2014–2017Patents assigned to GRIDELET EVELYNE (10)· patent assignee history
2014–2015Patents assigned to MERTENS HANS (6)· patent assignee history
2014–2015Patents assigned to VANHOUCKE TONY (6)· patent assignee history
2014–2015Patents assigned to DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS (5)· patent assignee history
2014–2018Based in Omal, BE· patent location history
2014Based in Seraing, BE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NXP BV | 21 | 2014–2018 |
| GRIDELET EVELYNEself | 10 | 2014–2017 |
| MERTENS HANS | 6 | 2014–2015 |
| VANHOUCKE TONY | 6 | 2014–2015 |
| DONKERS JOHANNES JOSEPHUS THEODORUS MARINUS | 5 | 2014–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Omal, BE | 20 | 2014–2018 |
| Seraing, BE | 1 | 2014 |