LexDanaLexDanabeta
Inventor

Ken Takeuchi

Inventor
Tokyo, JP

Overview

149→
Patents
1992–2019
Patent span
Physics
Primary field (CPC G)

Patents· 149 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores51%
H10BElectronic memory devices9%
G06FElectric digital data processing4%
E02FDredging3%
B60KArrangement or mounting of propulsion units or of transmissions in vehicles2%
B60LPropulsion of electrically-propelled vehicles2%
B60YIndexing scheme relating to aspects cross-cutting vehicle technology2%
Y02TClimate change mitigation technologies related to transportation2%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2%
A61KPreparations for medical, dental or toiletry purposes2%
PatentTitleYear
10,450,723Hybrid construction machinery201910,150,465Hybrid construction machine201810,060,095Hybrid work machine20189,977,733Memory controller, data storage device and memory control method using data utilization ratio20189,947,396Nonvolatile storage device and method of controlling the same20189,896,822'Hybrid construction machine'20189,753,652'Memory controller, data storage device, and memory control method'20179,744,962'Hybrid construction machine'20179,745,723'Construction machine and battery pack thereof'20179,684,464'Semiconductor storage device and control method for same'20179,611,624'Construction machine'20179,598,838'Hybrid work vehicle with load dependent target state of charge'20179,343,143'Resistance change nonvolatile storage device and method of controlling the same'20169,299,436'Semiconductor memory device having a plurality of chips and capability of outputting a busy signal'20169,036,443'Integrated circuit device'20159,015,524'Control device and data storage device having a plurality of memories and error correction where a data length and a code length are set to tend to be longer as a number of writes and erases increases'20158,742,838'Stacked structure with a voltage boosting supply circuit'20148,687,400'Semiconductor memory device having a plurality of chips and capability of outputting a busy signal'20148,677,217'Data input / output control device and semiconductor memory device system'20148,665,661'Semiconductor memory device capable of realizing a chip with high operation reliability and high yield'20148,635,511'Data processing apparatus, control device and data storage device'20148,589,764'Data storage device and control device configured to control data transfer between a host device, a first storage, and a second storage'20138,514,013'Integrated circuit device having a plurality of integrated circuit chips and an interposer'20138,472,268'Non-volatile semiconductor memory and simultaneous writing of data'20138,350,309'Nonvolatile semiconductor memory'20138,331,124'Semiconductor memory device having a plurality of chips and capability of outputting a busy signal'20128,316,063'Data-driven database processor'20128,259,494'Semiconductor memory device capable of realizing a chip with high operation reliability and high yield'20128,248,849'Semiconductor memory device capable of realizing a chip with high operation reliability and high yield'20128,223,558'Nonvolatile semiconductor memory device'20128,144,513'Non-volatile semiconductor memory'20128,139,388'Nonvolatile semiconductor storage device'20128,084,802'Nonvolatile semiconductor memory'20118,000,147'Nonvolatile semiconductor memory device'20117,969,784'Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells'20117,933,134'Semiconductor memory device having a plurality of chips and capability of outputting a busy signal'20117,893,477'Nonvolatile semiconductor memory'20117,864,592'Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells'20117,859,907'Non-volatile semiconductor memory'20107,787,277'Semiconductor memory device capable of realizing a chip with high operation reliability and high yield'20107,751,259'Semiconductor memory device having a plurality of chips and capability of outputting a busy signal'20107,746,707'Nonvolatile semiconductor memory device'20107,729,178'Non-volatile semiconductor memory device'20107,663,967'Semiconductor memory device having a plurality of chips and capability of outputting a busy signal'20107,639,544'Non-volatile semiconductor memory'20097,633,826'Semiconductor device, nonvolatile semiconductor memory, system including a plurality of semiconductor devices or nonvolatile semiconductor memories, electric card including semiconductor device or nonvolatile semiconductor memory, and electric device with which this electric card can be used'20097,596,042'Semiconductor memory device having a plurality of chips and capability of outputting a busy signal'20097,567,463'Sense amplifier circuit in multi-level non-volatile semiconductor memory comprising a boosting capacitor for boosting the potential at sense node'20097,542,323'Semiconductor memory device having a plurality of chips and capability of outputting a busy signal'20097,522,442'Semiconductor memory device having a plurality of chips and capability of outputting a busy signal'20097,518,922'NAND type flash memory'20097,492,643'Nonvolatile semiconductor memory'20097,489,010'Semiconductor memory device'20097,425,739'Nonvolatile semiconductor memory'20087,426,141'Semiconductor memory device'20087,411,819'Semiconductor integrated circuit device'20087,411,830'Nonvolatile memory cell having current compensated for temperature dependency and data read method thereof'20087,394,695'Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells'20087,379,340'Sense amplifier circuit in non-volatile semiconductor memory comprising a boosting capacitor for boosting the potential at sense node'20087,359,228'Semiconductor memory device capable of realizing a chip with high operation reliability and high yield'20087,352,625'Semiconductor memory device and memory card'20087,342,825'Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells'20087,332,762'Nonvolatile semiconductor memory'20087,327,616'Non-volatile semiconductor memory device'20087,317,652'Semiconductor device, nonvolatile semiconductor memory, system including a plurality of semiconductor devices or nonvolatile semiconductor memories, electric card including semiconductor device or nonvolatile semiconductor memory, and electric device with which this electric card can be used'20087,313,022'Non-volatile semiconductor memory'20077,310,270'Nonvolatile semiconductor memory device'20077,274,603'Level shifter circuit and semiconductor memory device using same'20077,269,073'Nonvolatile semiconductor memory'20077,242,616'Non-volatile semiconductor memory device'20077,224,612'Nonvolatile semiconductor memory device'20077,224,617'Nonvolatile semiconductor memory'20077,196,932'Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells'20077,177,196'Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells'20077,151,685'Semiconductor memory device capable of realizing a chip with high operation reliability and high yield'20067,057,947'SEMICONDUCTOR DEVICE, NONVOLATILE SEMICONDUCTOR MEMORY, SYSTEM INCLUDING A PLURALITY OF SEMICONDUCTOR DEVICES OR NONVOLATILE SEMICONDUCTOR MEMORIES, ELECTRIC CARD INCLUDING SEMICONDUCTOR DEVICE OR NONVOLATILE SEMICONDUCTOR MEMORY, AND ELECTRIC DEVICE WITH WHICH THIS ELECTRIC CARD CAN BE USED'20067,009,878'Data reprogramming/retrieval circuit for temporarily storing programmed/retrieved data for caching and multilevel logical functions in an EEPROM'20067,002,845'Semiconductor memory device capable of realizing a chip with high operation reliability and high yield'20066,990,003'Semiconductor memory device having a plurality of chips and capability of outputting a busy signal'20066,974,979'Nonvolatile semiconductor memory'20056,970,388'Non-volatile semiconductor memory'20056,943,004'Transformed microorganism and process for producing D-aminoacylase'20056,940,752'Nonvolatile semiconductor memory device'20056,937,510'Non-volatile semiconductor memory'20056,859,401'Fail number detecting circuit of flash memory'20056,836,444'Semiconductor memory device capable of realizing a chip with high operation reliability and high yield'20046,819,596'Semiconductor memory device with test mode'20046,801,060'Semiconductor integrated circuit'20046,798,698'Nonvolatile semiconductor memory device'20046,698,291'Ultrasonic inspection apparatus'20046,680,858'Semiconductor memory device having a plurality of chips and capability of outputting a busy signal'20046,674,318'Semiconductor integrated circuit'20046,667,904'Multi-level non-volatile semiconductor memory device with verify voltages having a smart temperature coefficient'20036,657,896'Fail number detecting circuit of flash memory'20036,646,930'Non-volatile semiconductor memory'20036,643,180'Semiconductor memory device with test mode'20036,611,447'Semiconductor memory device capable of realizing a chip with high operation reliability and high yield'20036,590,444'Semiconductor integrated circuit with a down converter for generating an internal voltage'20036,549,464'Nonvolatile semiconductor memory device'20036,545,909'Nonvolatile semiconductor memory device'20036,512,253'Nonvolatile semiconductor memory'20036,507,518'Fail number detecting circuit of flash memory'20036,469,573'Semiconductor integrated circuit'20026,452,437'Voltage generator for compensating for temperature dependency of memory cell current'20026,434,055'Nonvolatile semiconductor memory device'20026,424,588'Semiconductor memory device capable of realizing a chip with high operation reliability and high yield'20026,404,274'Internal voltage generating circuit capable of generating variable multi-level voltages'20026,373,746'Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells'20026,363,010'Nonvolatile semiconductor memory device'20026,353,242'Nonvolatile semiconductor memory'20026,351,179'Semiconductor integrated circuit having active mode and standby mode converters'20026,307,785'Non-volatile semiconductor memory device'20016,301,153'Nonvolatile semiconductor memory device'20016,282,117'Nonvolatile semiconductor memory device'20016,278,639'Booster circuit having booster cell sections connected in parallel, voltage generating circuit and semiconductor memory which use such booster circuit'20016,240,012'Semiconductor memory device capable of realizing a chip with high operation reliability and high yield'20016,208,560'Nonvolatile semiconductor memory device'20016,154,391'Nonvolatile semiconductor memory device'20006,147,911'Nonvolatile semiconductor memory device'20006,134,140'Nonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cells'20006,134,157'Nonvolatile semiconductor memory device capable of preventing data from being written in error'20006,069,823'Nonvolatile semiconductor memory device'20006,064,591'Memory system'20006,055,188'Nonvolatile semiconductor memory device having a data circuit for erasing and writing operations'20006,046,935'Semiconductor device and memory system'20006,046,940'Nonvolatile semiconductor memory device'20006,044,013'Nonvolatile semiconductor memory device'20006,028,792'Multi-level memory for verifying programming results'20006,005,802'Nonvolatile semiconductor memory device using a bit line potential raised by use of a coupling capacitor between bit lines'19995,986,933'Semiconductor memory device having variable number of selected cell pages and subcell arrays'19995,969,985'Nonvolatile semiconductor memory device'19995,940,321'Nonvolatile semiconductor memory device'19995,920,507'Nonvolatile semiconductor memory device'19995,909,398'Semiconductor memory device and high-voltage switching circuit'19995,905,691'Semiconductor memory'19995,903,495'Semiconductor device and memory system'19995,864,504'Nonvolatile semiconductor memory with temperature compensation for read/verify referencing scheme'19995,844,841'Memory system'19985,828,621'Semiconductor memory device and high-voltage switching circuit'19985,781,478'Nonvolatile semiconductor memory device'19985,738,669'Absorbent article'19985,708,606'Semiconductor memory device and high-voltage switching circuit'19985,698,879'Nonvolatile semiconductor memory device'19975,680,347'Nonvolatile semiconductor memory device'19975,623,100'Ultrasonic inspection and imaging intstrument'19975,466,849'Siloxane derivatives, producing method thereof and agents including siloxane derivative'19955,306,838'Siloxane derivatives, producing method thereof and agents including siloxane derivative'19945,210,251'Ester-modified silicone derivative and a cosmetic composition containing the same'19935,144,054'Siloxane derivatives, producing method thereof and agents including siloxane derivative'1992

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1997–2016Patents assigned to TOSHIBA KK (117)· patent assignee history
1997–2018Based in Tokyo, JP· patent location history
1997–2019Based in Tsuchiura, JP· patent location history
2004–2016Based in Stanford, CA, US· patent location history
2007–2009Based in Kawasaki, JP· patent location history
2008–2017Based in Yokohama, JP· patent location history
2011–2018Patents assigned to TAKEUCHI KEN (20)· patent assignee history
2011–2014Patents assigned to NAKAMURA HIROSHI (10)· patent assignee history
2011–2014Patents assigned to IMAMIYA KENICHI (9)· patent assignee history
2017–2019Patents assigned to HITACHI CONSTRUCTION MACH CO (8)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK1171997–2016
TAKEUCHI KENself202011–2018
NAKAMURA HIROSHI102011–2014
IMAMIYA KENICHI92011–2014
HITACHI CONSTRUCTION MACH CO82017–2019
Locations
LocationPatentsSpan
Tokyo, JP1031997–2018
Stanford, California, US102004–2016
Kawasaki, JP92007–2009
Yokohama, JP62008–2017
Tsuchiura, JP51997–2019