Inventor
Minoru Ikarashi
Inventor
Kanagawa, JP
Overview
Patents· 31 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for22%
H10BElectronic memory devices21%
G11CStatic stores20%
B82YSpecific uses or applications of nanostructures7%
H01LSemiconductor devices7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
G11BInformation storage based on relative movement between record carrier and transducer4%
H01FMagnets4%
H10DInorganic electric semiconductor devices3%
Y10TTechnical subjects covered by former us classification2%
PatentTitleYear
11,004,902Circuit element, storage device, electronic equipment, method of writing information into circuit element, and method of reading information from circuit element202110,971,685Selective device, memory cell, and storage unit202110,804,321Switch device and storage unit202010,403,680Switch device and storage unit201910,186,658Memory device and method of manufacturing memory device20199,466,791'Storage device and storage unit'20169,246,090'Storage device and storage unit'20168,680,502'Amorphous semiconductor layer memory device'20148,659,000'Amorphous semiiconductor layer memory device'20148,437,180'Memory and write control method'20138,339,840'Storage element and memory'20128,331,136'Recording method of nonvolatile memory and nonvolatile memory'20128,194,443'Memory device and memory'20128,169,818'Recording method for magnetic memory device'20128,149,613'Resistance variable memory device'20128,089,802'Memory device and memory'20128,072,789'Resistance-change memory device'20118,018,759'Tunnel magnetic resistance effect memory'20117,881,097'Storage element and memory'20117,633,796'Storage element and memory'20097,529,122'Storage element and memory'20097,502,250'Memory device'20097,345,367'Magnetic memory device and producing method thereof'20087,173,791'Ferroelectric device including a unit element having a topological outline in a C-shape or a S-shape'20077,119,419'Detailed description of the presently preferred embodiments'20066,992,342'Magnetic memory device having a non-volatile magnetic section and manufacturing thereof'20066,934,130'Magnetic device having shaped ferromagnetic film'20056,883,384'Force sensing device having magnetized element and magneto electric material'20056,621,666'Magnetoresistive-effect element having electrode layers oppositely disposed on main surfaces of a magnetoresistive-effect thin film having hard magnetic bias layers with a particular resistivity'20036,621,731'Magnetic memory device'20036,534,203'Magnetic recording medium'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2021Patents assigned to SONY CORP (28)· patent assignee history
2003–2021Based in Kanagawa, JP· patent location history
2005Based in Yokohama, JP· patent location history
2011–2014Patents assigned to IKARASHI MINORU (10)· patent assignee history
2011–2013Patents assigned to HOSOMI MASANORI (8)· patent assignee history
2011–2013Patents assigned to KANO HIROSHI (8)· patent assignee history
2011–2013Patents assigned to OHMORI HIROYUKI (8)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SONY CORP | 28 | 2003–2021 |
| IKARASHI MINORUself | 10 | 2011–2014 |
| HOSOMI MASANORI | 8 | 2011–2013 |
| KANO HIROSHI | 8 | 2011–2013 |
| OHMORI HIROYUKI | 8 | 2011–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 30 | 2003–2021 |
| Yokohama, JP | 1 | 2005 |