Inventor
Hongbin Zhu
Inventor
Boise, ID, US
Overview
Patents· 46 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices27%
H01LSemiconductor devices26%
H10DInorganic electric semiconductor devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
G11CStatic stores4%
C23CCoating metallic material1%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%
Y10TTechnical subjects covered by former us classification1%
PatentTitleYear
10,879,254Three-dimensional memory devices having through array contacts and methods for forming the same202010,879,259Methods and apparatuses having memory cells including a monolithic semiconductor channel202010,818,631Semiconductor structure and method of forming the same202010,811,380Semiconductor structure and forming method thereof202010,790,297Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layer202010,741,390Forming method of epitaxial layer, forming method of 3D NAND memory and annealing apparatus202010,707,121Solid state memory device, and manufacturing method thereof202010,665,599Integrated structures and methods of forming vertically-stacked memory cells202010,651,315Three dimensional memory202010,622,374Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure202010,608,004Semiconductor devices and methods of fabrication202010,566,336Three-dimensional memory devices having through array contacts and methods for forming the same202010,553,611Memory arrays and methods of fabricating integrated structure202010,504,859Electronic component guard ring201910,453,829Method and apparatus for reducing capacitance of input/output pins of memory device201910,446,571Memory circuitry comprising a vertical string of memory cells and a conductive via and method used in forming a vertical string of memory cells and a conductive via201910,446,507Semiconductor devices and semiconductor dice including electrically conductive interconnects between die rings201910,438,968Memory arrays and methods of fabricating integrated structures201910,269,819Integrated structures and methods of forming vertically-stacked memory cells201910,242,995Drain select gate formation methods and apparatus201910,224,337Memory having a continuous channel201910,134,758Memory devices and systems having reduced bit line to drain select gate shorting and associated methods201810,090,318Vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure and method of forming a vertical string of memory cells individually comprising a programmable charge storage transistor comprising a control gate and a charge storage structure201810,090,317Methods and apparatuses having memory cells including a monolithic semiconductor channel201810,038,002Semiconductor devices and methods of fabrication201810,002,767Aluminum oxide landing layer for conductive channels for a three dimensional circuit device20189,935,120Methods of fabricating integrated structures20189,842,847'Drain select gate formation methods and apparatus'20179,741,734'Memory devices and systems having reduced bit line to drain select gate shorting and associated methods'20179,659,949'Integrated structures'20179,613,973'Memory having a continuous channel'20179,595,531'Aluminum oxide landing layer for conductive channels for a three dimensional circuit device'20179,431,410'Methods and apparatuses having memory cells including a monolithic semiconductor channel'20169,305,844'Method of making a semiconductor device'20169,287,379'Memory arrays'20169,048,194'Method for selectively modifying spacing between pitch multiplied structures'20158,963,156'Semiconductor devices including WiSX'20158,696,922'Methods of plasma etching platinum-comprising materials, methods of processing semiconductor substrates in the fabrication of integrated circuitry, and methods of forming a plurality of memory cells'20148,507,384'Method for selectively modifying spacing between pitch multiplied structures'20138,409,457'Methods of forming a photoresist-comprising pattern on a substrate'20138,173,507'Methods of forming integrated circuitry comprising charge storage transistors'20128,030,218'Method for selectively modifying spacing between pitch multiplied structures'20117,985,681'Method for selectively forming symmetrical or asymmetrical features using a symmetrical photomask during fabrication of a semiconductor device and electronic systems including the semiconductor device'20117,898,019'Semiconductor constructions having multiple patterned masking layers over NAND gate stacks'20117,476,588'Methods of forming NAND cell units with string gates of various widths'20096,153,061'Method of synthesizing cubic boron nitride films'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000Based in Fremont, CA, US· patent location history
2009–2020Patents assigned to MICRON TECHNOLOGY INC (32)· patent assignee history
2009–2020Based in Boise, ID, US· patent location history
2012–2014Patents assigned to ZHU HONGBIN (4)· patent assignee history
2013–2014Patents assigned to SCHRINSKY ALEX (2)· patent assignee history
2017–2020Patents assigned to INTEL CORP (7)· patent assignee history
2020Patents assigned to YANGTZE MEMORY TECH CO LTD (6)· patent assignee history
2020Based in Wuhan, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 32 | 2009–2020 |
| INTEL CORP | 7 | 2017–2020 |
| YANGTZE MEMORY TECH CO LTD | 6 | 2020 |
| ZHU HONGBINself | 4 | 2012–2014 |
| SCHRINSKY ALEX | 2 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Boise, ID, US | 39 | 2009–2020 |
| Wuhan, CN | 6 | 2020 |
| Fremont, California, US | 1 | 2000 |