Inventor
Shin-Cheng Lin
Inventor
Tainan, TW
Overview
Patents· 55 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices34%
H01LSemiconductor devices33%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems3%
B24BMachines, devices, or processes for grinding or polishing1%
G01BMeasuring length, thickness or similar linear dimensions1%
G05FSystems for regulating electric or magnetic variables1%
H03KPulse technique1%
H10HInorganic light-emitting semiconductor devices having potential barriers1%
PatentTitleYear
11,052,507Auxiliary positioning device of pedestal grinder202110,867,993Touch sensing circuits and methods for detecting touch events202010,790,365Lateral diffused metal oxide semiconductor field effect transistor202010,714,410Semiconductor structure202010,707,322Semiconductor devices and methods for fabricating the same202010,692,786Semiconductor structures202010,692,857Semiconductor device combining passive components with HEMT202010,644,132Method and apparatus for MOS device with doped region202010,629,475Semiconductor device with two-part insulation structure within non-active region202010,573,738Method and apparatus for power device with multiple doped regions202010,483,362High electron mobility transistor devices and method for fabricating the same201910,475,784Semiconductor structure with a resistor and a transistor and method for forming the same201910,424,659High electron mobility transistor201910,388,649Semiconductor devices and methods for manufacturing the same201910,355,096High electron mobility transistor devices and method for fabricating the same201910,325,990High electron mobility transistor devices and method for fabricating the same201910,262,938Semiconductor structure having conductive layer overlapping field oxide201910,262,997High-voltage LDMOSFET devices having polysilicon trench-type guard rings201910,256,332High hole mobility transistor201910,256,340High-voltage semiconductor device and method for manufacturing the same201910,229,907Semiconductor device and method for manufacturing the same201910,217,831High electron mobility transistor devices201910,217,854Semiconductor device and method of manufacturing the same201910,205,014Method and apparatus for power device with multiple doped regions201910,181,512JFET and method for fabricating the same201910,170,468Semiconductor structure and method of manufacturing the same201910,128,331High-voltage semiconductor device and method for manufacturing the same201810,068,986Enhanced-mode high electron mobility transistor and method for forming the same201810,043,901Ultra-high voltage devices201810,032,938Semiconductor devices and methods for manufacturing the same201810,033,260Boost devices with active diodes and switch-mode converters thereof201810,014,408Semiconductor devices and methods for forming the same201810,002,956High electron mobility transistor20189,947,653High-voltage semiconductor devices20189,941,356JFET and method for fabricating the same20189,929,283'Junction field effect transistor (JFET) with first and second top layer of opposite conductivity type for high driving current and low pinch-off voltage'20189,842,896'Ultra-high voltage devices and method for fabricating the same'20179,799,512'Semiconductor substrate structures and methods for forming the same'20179,768,283'High-voltage semiconductor structure'20179,666,711'Semiconductor device and method for manufacturing the same'20179,608,107'Method and apparatus for MOS device with doped region'20179,577,506'High-side circuits with modified diode and layout placement thereof'20179,559,200'Method and apparatus for power device with multiple doped regions'20179,553,143'Semiconductor device and method for fabricating the same'20179,455,345'Method and apparatus for power device with depletion structure'20169,306,034'Method and apparatus for power device with multiple doped regions'20169,269,808'Method and apparatus for power device with depletion structure'20169,129,989'Semiconductor device and method for manufacturing the same'20159,054,129'Semiconductor device and method for manufacturing the same'20158,723,256'Semiconductor device and fabricating method thereof'20148,704,300'Semiconductor device and fabricating method thereof'20148,501,565'Method for fabricating deep trench isolation'20137,795,083'Semiconductor structure and fabrication method thereof'20107,411,271'Complementary metal-oxide-semiconductor field effect transistor'20086,715,214'Retractable tape measure'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004Based in Taipei, TW· patent location history
2008Patents assigned to EPISIL TECHNOLOGIES INC (1)· patent assignee history
2008Based in Hsinchu, TW· patent location history
2010–2020Patents assigned to VANGUARD INT SEMICONDUCT CORP (52)· patent assignee history
2010–2020Based in Tainan, TW· patent location history
2013Patents assigned to CHIN YU-LUNG (1)· patent assignee history
2013Patents assigned to LIN SHIN-CHENG (1)· patent assignee history
2021Patents assigned to KOWUTSUMI ELECTRO CO LTD (1)· patent assignee history
2021Based in Taichung, TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| VANGUARD INT SEMICONDUCT CORP | 52 | 2010–2020 |
| CHIN YU-LUNG | 1 | 2013 |
| EPISIL TECHNOLOGIES INC | 1 | 2008 |
| KOWUTSUMI ELECTRO CO LTD | 1 | 2021 |
| LIN SHIN-CHENGself | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tainan, TW | 52 | 2010–2020 |
| Taichung, TW | 1 | 2021 |
| Hsinchu, TW | 1 | 2008 |
| Taipei, TW | 1 | 2004 |