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Inventor

Quanxin Yun

Inventor
Beijing, CN

Overview

6→
Patents
2012–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 6 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices55%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
H01LSemiconductor devices18%
PatentTitleYear
9,484,208'Preparation method of a germanium-based schottky junction'20169,312,126'Method for processing gate dielectric layer deposited on germanium-based or group III-V compound-based substrate'20168,673,722'Strained channel field effect transistor and the method for fabricating the same'20148,541,847'Semiconductor device and method for fabricating the same'20138,450,155'Method for introducing channel stress and field effect transistor fabricated by the same'20138,288,238'Method for fabricating a tunneling field-effect transistor'2012

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2012–2016Patents assigned to UNIV BEIJING (6)· patent assignee history
2012–2014Patents assigned to HUANG RU (4)· patent assignee history
2012–2014Patents assigned to YUN QUANXIN (4)· patent assignee history
2012–2016Based in Beijing, CN· patent location history
2013–2014Patents assigned to AN XIA (3)· patent assignee history
2013–2014Patents assigned to ZHANG XING (3)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
UNIV BEIJING62012–2016
HUANG RU42012–2014
YUN QUANXINself42012–2014
AN XIA32013–2014
ZHANG XING32013–2014
Locations
LocationPatentsSpan
Beijing, CN62012–2016