Inventor
CHUNG-HUI CHEN
Inventor
TW
Overview
Patents· 40 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices25%
H01LSemiconductor devices24%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
G06FElectric digital data processing10%
LOC136%
B82YSpecific uses or applications of nanostructures3%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
G11CStatic stores2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
PatentTitleYear
12,563,754Hybrid decoupling capacitor and method forming same202612,484,280Silicide-layer-coupled doped portion of active region and method of fabricating same202512,451,430Method of fabricating semiconductor devices having different architectures and semiconductor devices fabricated thereby202512,446,321Circuits designed and manufactured with first and second fin boundaries202512,408,426Circuits designed and manufactured with first and second design rules202512,334,428Cell having stacked pick-up region202512,272,649Semiconductor device and method202512,199,030Semiconductor devices including decoupling capacitors202512,165,972Method of manufacturing conductive lines in a circuit202412,159,904Cell placement optimization202412,125,781Cell having stacked pick-up region202412,093,627Semiconductor device, and method of forming same202412,094,872Capacitor in nanosheet202412,073,165Standard cell design202412,068,306Integrated circuit device202412,062,652Zero mask high density capacitor202412,021,033Integrated circuit device having active region coupled to metal layers on opposite sides of substrate, and method202411,984,444Semiconductor device and method of manufacturing the same202411,967,621Silicide-sandwiched source/drain region and method of fabricating same2024D1016738Battery pack202411,901,283Capacitor and method for forming the same202411,901,289Semiconductor device structure with resistive element202411,842,963Semiconductor device and method202311,837,535Semiconductor devices including decoupling capacitors202311,817,452Method for forming decoupling capacitors between the interposing conductors and the multiple gates2023D1003832Uninterruptible power supply202311,749,759Decoupling FinFET capacitors202311,676,957Integrated circuit device, system and method202311,581,298Zero mask high density capacitor202311,563,095Silicide-sandwiched source/drain region and method of fabricating same202311,562,953Cell having stacked pick-up region2023D0971153Surge protector202211,494,542Semiconductor device, method of generating layout diagram and system for same202211,450,600Semiconductor devices including decoupling capacitors2022D0961511Uninterruptible power supply202211,404,369Semiconductor device structure with resistive element2022D0952551Battery pack202211,289,569Hybrid decoupling capacitor and method forming same2022D0938361Surge protector adaptor2021D0938360Surge protector2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2024Patents assigned to SCHNEIDER ELECTRIC IT CORP (7)· patent assignee history
2021–2026Based in TW· patent location history
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (33)· patent assignee history
2024Patents assigned to TAIWAN SEMICONDUCTOR MFG LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 33 | 2022–2026 |
| SCHNEIDER ELECTRIC IT CORP | 7 | 2021–2024 |
| TAIWAN SEMICONDUCTOR MFG LTD | 1 | 2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 40 | 2021–2026 |