Inventor
John F. Conley, Jr.
Inventor
Camas, WA, US
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10DInorganic electric semiconductor devices15%
C23CCoating metallic material13%
C30BSingle-crystal growth9%
B82YSpecific uses or applications of nanostructures6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
B81BMicrostructural devices or systems, e.g. micromechanical devices4%
G01NInvestigating or analysing materials by determining their chemical or physical properties4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
C01BNon-metallic elements2%
PatentTitleYear
8,053,266'Piezo-diode cantilever MEMS fabrication method'20117,763,947'Piezo-diode cantilever MEMS'20107,597,757'ZnO film with C-axis orientation'20097,589,464'Nanotip electrode electroluminescence device with contoured phosphor layer'20097,528,695'Method to manipulate selectivity of a metal oxide sensor'20097,473,640'Reactive gate electrode conductive barrier'20097,462,499'Carbon nanotube with ZnO asperities'20087,442,415'Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films'20087,309,621'Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition'20077,303,631'Selective growth of ZnO nanostructure using a patterned ALD ZnO seed layer'20077,208,768'Electroluminescent device'20077,199,029'Selective deposition of ZnO nanostructures on a silicon substrate using a nickel catalyst and either patterned polysilicon or silicon surface modification'20077,192,802'ALD ZnO seed layer for deposition of ZnO nanostructures on a silicon substrate'20077,160,819'Method to perform selective atomic layer deposition of zinc oxide'20077,053,009'Nanolaminate film atomic layer deposition method'20067,029,944'Methods of forming a microlens array over a substrate employing a CMP stop'20066,930,059'Method for depositing a nanolaminate film by atomic layer deposition'20056,875,677'Method to control the interfacial layer for deposition of high dielectric constant films'20056,873,048'System and method for integrating multiple metal gates for CMOS applications'20056,686,212'Method to deposit a stacked high- gate dielectric for CMOS applications'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2011Patents assigned to SHARP LAB OF AMERICA INC (20)· patent assignee history
2004–2011Based in Camas, WA, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHARP LAB OF AMERICA INC | 20 | 2004–2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Camas, Washington, US | 20 | 2004–2011 |